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MPXD2005VMM80R Datasheet(PDF) 93 Page - Freescale Semiconductor, Inc |
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MPXD2005VMM80R Datasheet(HTML) 93 Page - Freescale Semiconductor, Inc |
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93 / 119 page  Electrical characteristics PXS20 Microcontroller Data Sheet, Rev. 1 Preliminary—Subject to Change Without Notice Freescale Semiconductor 93 3.16 Flash memory electrical characteristics 4 During the sample time the input capacitance CS can be charged/discharged by the external source. The internal resistance of the analog source must allow the capacitance to reach its final voltage level within tsample. After the end of the sample time tsample, changes of the analog input voltage have no effect on the conversion result. Values for the sample clock tsample depend on programming. 5 This parameter does not include the sample time t sample, but only the time for determining the digital result and the time to load the result register with the conversion result. 6 See Figure 9. 7 For the 144-pin package. 8 No missing codes. Table 24. Flash memory program and erase electrical specifications No. Symbol Parameter Min Typ1 1 Typical program and erase times assume nominal supply values and operation at T J =25 °C. These values are characterized, but not tested. Factory Avg2 2 Factory Average program and erase times represent the effective performance averaged over > 1024 pages or blocks, and are provided for factory throughput estimation assuming < 100 program/erase cycles, nominal supply values and operation at TJ =25 °C. These values are characterized, but not tested. Initial Max3 3 Initial Max program and erase times provide guidance for time-out limits used in the factory and apply for < 100 program/erase cycles, nominal supply values and operation at TJ =25 °C. These values are verified at production test. Lifetime Max4 4 Lifetime Max program and erase times apply across the voltage, temperature, and cycling range of product life. These values are characterized, but not tested. Unit 1TDWPROGRAM * 5 5 See Notes for individual specifications, as shown in column headings. Double word (64 bits) program time6 6 Actual hardware programming times. These do not include software overhead. — 39 — — 500 µs 2TPPROGRAM * 5 Page(128 bits) program time6 — 48 53 100 500 µs 3T16KPPERASE * 5 16 KB block pre-program and erase time — TBD TBD 500 5000 ms 4T48KPPERASE * 5 48 KB block pre-program and erase time — TBD TBD 750 5000 ms 5T64KPPERASE * 5 64 KB block pre-program and erase time — TBD TBD 900 5000 ms 6T128KPPERASE * 5 128 KB block pre-program and erase time — TBD TBD 1300 7500 ms 7T256KPPERASE * 5 256 KB block pre-program and erase time — TBD TBD 2600 15000 ms Table 25. Flash memory timing Symbol Parameter Value Unit Min Typ Max TRES D Time from clearing the MCR-ESUS or PSUS bit with EHV = 1 until DONE goes low — — 100 ns TDONE D Time from 0 to 1 transition on the MCR-EHV bit initiating a program/erase until the MCR-DONE bit is cleared —— 5 ns |
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