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DSPIC30F4012 Datasheet(PDF) 185 Page - Microchip Technology

Part # DSPIC30F4012
Description  High-Performance, 16-Bit Digital Signal Controllers
PDF  238 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

DSPIC30F4012 Datasheet(HTML) 185 Page - Microchip Technology

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© 2010 Microchip Technology Inc.
DS70135G-page 185
dsPIC30F4011/4012
TABLE 24-10: ELECTRICAL CHARACTERISTICS: BOR
DC CHARACTERISTICS
Standard Operating Conditions: 2.5V to 5.5V (unless otherwise stated)
Operating temperature
-40°C
≤TA ≤+85°C for Industrial
-40°C
≤TA ≤+125°C for Extended
Param
No.
Symbol
Characteristic
Min
Typ(1)
Max
Units
Conditions
BO10
VBOR
BOR Voltage on
VDD Transition
High-to-Low(2)
BORV = 11(3)
—
—
—
V
Not in operating range
BORV = 10
2.6
—
2.71
V
BORV = 01
4.1
—
4.4
V
BORV = 00
4.58
—
4.73
V
BO15
VBHYS
—5—
mV
Note 1:
Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
2:
These parameters are characterized but not tested in manufacturing.
3:
‘11’ values not in usable operating range.
TABLE 24-11: DC CHARACTERISTICS: PROGRAM AND EEPROM
DC CHARACTERISTICS
Standard Operating Conditions: 2.5V to 5.5V (unless otherwise stated)
Operating temperature
-40°C
≤TA ≤+85°C for Industrial
-40°C
≤TA ≤+125°C for Extended
Param
No.
Symbol
Characteristic
Min
Typ(1)
Max
Units
Conditions
Data EEPROM Memory(2)
D120
ED
Byte Endurance
100K
1M
—
E/W
-40
° C ≤TA ≤+85°C
D121
VDRW
VDD for Read/Write
VMIN
—
5.5
V
Using EECON to read/write,
VMIN = Minimum operating voltage
D122
TDEW
Erase/Write Cycle Time
0.8
2
2.6
ms
RTSP
D123
TRETD
Characteristic Retention
40
100
—
Year Provided no other specifications are
violated
D124
IDEW
IDD During Programming
—
10
30
mA
Row Erase
Program Flash Memory(2)
D130
EP
Cell Endurance
10K
100K
—
E/W
-40
° C ≤TA ≤+85°C
D131
VPR
VDD for Read
VMIN
—5.5
V
VMIN = Minimum operating voltage
D132
VEB
VDD for Bulk Erase
4.5
—
5.5
V
D133
VPEW
VDD for Erase/Write
3.0
—
5.5
V
D134
TPEW
Erase/Write Cycle Time
0.8
2
2.6
ms
RTSP
D135
TRETD
Characteristic Retention
40
100
—
Year Provided no other specifications are
violated
D137
IPEW
IDD During Programming
—
10
30
mA
Row Erase
D138
IEB
IDD During Programming
—
10
30
mA
Bulk Erase
Note 1:
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
2:
These parameters are characterized but not tested in manufacturing.



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