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DSPIC30F4012 Datasheet(PDF) 185 Page - Microchip Technology |
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DSPIC30F4012 Datasheet(HTML) 185 Page - Microchip Technology |
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185 / 238 page ![]() © 2010 Microchip Technology Inc. DS70135G-page 185 dsPIC30F4011/4012 TABLE 24-10: ELECTRICAL CHARACTERISTICS: BOR DC CHARACTERISTICS Standard Operating Conditions: 2.5V to 5.5V (unless otherwise stated) Operating temperature -40°C ≤TA ≤+85°C for Industrial -40°C ≤TA ≤+125°C for Extended Param No. Symbol Characteristic Min Typ(1) Max Units Conditions BO10 VBOR BOR Voltage on VDD Transition High-to-Low(2) BORV = 11(3) — — — V Not in operating range BORV = 10 2.6 — 2.71 V BORV = 01 4.1 — 4.4 V BORV = 00 4.58 — 4.73 V BO15 VBHYS —5— mV Note 1: Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and are not tested. 2: These parameters are characterized but not tested in manufacturing. 3: ‘11’ values not in usable operating range. TABLE 24-11: DC CHARACTERISTICS: PROGRAM AND EEPROM DC CHARACTERISTICS Standard Operating Conditions: 2.5V to 5.5V (unless otherwise stated) Operating temperature -40°C ≤TA ≤+85°C for Industrial -40°C ≤TA ≤+125°C for Extended Param No. Symbol Characteristic Min Typ(1) Max Units Conditions Data EEPROM Memory(2) D120 ED Byte Endurance 100K 1M — E/W -40 ° C ≤TA ≤+85°C D121 VDRW VDD for Read/Write VMIN — 5.5 V Using EECON to read/write, VMIN = Minimum operating voltage D122 TDEW Erase/Write Cycle Time 0.8 2 2.6 ms RTSP D123 TRETD Characteristic Retention 40 100 — Year Provided no other specifications are violated D124 IDEW IDD During Programming — 10 30 mA Row Erase Program Flash Memory(2) D130 EP Cell Endurance 10K 100K — E/W -40 ° C ≤TA ≤+85°C D131 VPR VDD for Read VMIN —5.5 V VMIN = Minimum operating voltage D132 VEB VDD for Bulk Erase 4.5 — 5.5 V D133 VPEW VDD for Erase/Write 3.0 — 5.5 V D134 TPEW Erase/Write Cycle Time 0.8 2 2.6 ms RTSP D135 TRETD Characteristic Retention 40 100 — Year Provided no other specifications are violated D137 IPEW IDD During Programming — 10 30 mA Row Erase D138 IEB IDD During Programming — 10 30 mA Bulk Erase Note 1: Data in “Typ” column is at 5V, 25°C unless otherwise stated. 2: These parameters are characterized but not tested in manufacturing. |
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