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LME49720MA/NOPB Datasheet(PDF) 3 Page - Texas Instruments |
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LME49720MA/NOPB Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 36 page ![]() LME49720 www.ti.com SNAS393C – MARCH 2007 – REVISED APRIL 2013 ABSOLUTE MAXIMUM RATINGS (1) (2) (3) Power Supply Voltage (VS = V + - V-) 36V Storage Temperature −65°C to 150°C Input Voltage (V-) - 0.7V to (V+) + 0.7V Output Short Circuit (4) Continuous Power Dissipation Internally Limited ESD Susceptibility (5) 2000V ESD Susceptibility (6) Pins 1, 4, 7 and 8 200V Pins 2, 3, 5 and 6 100V Junction Temperature 150°C Thermal Resistance θJA (SOIC) 145°C/W θJA (PDIP) 102°C/W θJA (TO-99) 150°C/W θJC (TO-99) 35°C/W Temperature Range TMIN ≤ TA ≤ TMAX –40°C ≤ TA ≤ 85°C Supply Voltage Range ±2.5V ≤ VS ≤ ± 17V (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. (2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For enusred specifications and test conditions, see Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. (3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. (4) Amplifier output connected to GND, any number of amplifiers within a package. (5) Human body model, 100pF discharged through a 1.5k Ω resistor. (6) Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50 Ω). ELECTRICAL CHARACTERISTICS FOR THE LME49720 (1) (2) The following specifications apply for VS = ±15V, RL = 2kΩ, fIN = 1kHz, and TA = 25°C, unless otherwise specified. LME49720 Units Symbol Parameter Conditions (Limits) Typical (3) Limit (4) AV = 1, VOUT = 3Vrms THD+N Total Harmonic Distortion + Noise RL = 2kΩ 0.00003 % (max) RL = 600Ω 0.00003 0.00009 AV = 1, VOUT = 3VRMS IMD Intermodulation Distortion 0.00005 % Two-tone, 60Hz & 7kHz 4:1 GBWP Gain Bandwidth Product 55 45 MHz (min) SR Slew Rate ±20 ±15 V/ μs (min) VOUT = 1VP-P, –3dB FPBW Full Power Bandwidth referenced to output magnitude 10 MHz at f = 1kHz AV = –1, 10V step, CL = 100pF ts Settling time 1.2 μs 0.1% error range Equivalent Input Noise Voltage fBW = 20Hz to 20kHz 0.34 0.65 μVRMS (max) en f = 1kHz 2.7 4.7 nV/ √Hz Equivalent Input Noise Density f = 10Hz 6.4 (max) f = 1kHz 1.6 in Current Noise Density pA/ √Hz f = 10Hz 3.1 VOS Offset Voltage ±0.1 ±0.7 mV (max) (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. (2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For enusred specifications and test conditions, see Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. (3) Typical specifications are specified at +25ºC and represent the most likely parametric norm. (4) Tested limits are ensured to AOQL (Average Outgoing Quality Level). Copyright © 2007–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LME49720 |
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