STM32F101RF datasheet(38/108 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F101xF, STM32F101xG

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Doc ID 17143 Rev 2

5.3

Operating conditions

5.3.1

General operating conditions

5.3.2

Operating conditions at power-up / power-down

The parameters given in Table 11 are derived from tests performed under the ambient

temperature condition summarized in Table 10.

5.3.3

Embedded reset and power control block characteristics

The parameters given in Table 12 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 10.

Table 10.

General operating conditions

Symbol

Parameter

Conditions

Min

Max

Unit

fHCLK

Internal AHB clock frequency

MHz

fPCLK1

Internal APB1 clock frequency

fPCLK2

Internal APB2 clock frequency

VDD

Standard operating voltage

3.6

VDDA

(1)

When the ADC is used, refer to Table 55: ADC characteristics.

Analog operating voltage

(ADC not used)

Must be the same potential

as VDD

(2)

It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV

between VDD and VDDA can be tolerated during power-up and operation.

23.6

Analog operating voltage

(ADC used)

2.4

3.6

VBAT

Backup operating voltage

1.8

3.6

Power dissipation at TA =

85 °C(3)

If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal

characteristics on page 104).

LQFP144

666

LQFP100

434

LQFP64

444

Ambient temperature

Maximum power dissipation

–40

°C

Low power dissipation(4)

In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see

Table 6.2: Thermal characteristics on page 104).

–40

105

°C

Junction temperature range

–40

105

°C

Table 11.

Operating conditions at power-up / power-down

Symbol

Parameter

Conditions

Min

Max

Unit

tVDD

VDD rise time rate



µs/V

VDD fall time rate



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