Application Note

Sep 2008

5

Order Number: 320005-04

Conversion Guide: P33 130nm to 65nm

1.0

Introduction

Memory (P33-65nm) device.

Note:

referred to as the P33 65nm device.

This document was written based on device information available at the time. Any

changes in specifications to either device might not be reflected in this document. Refer

to the appropriate documents or sales personnel for the current product information

before finalizing any design.

2.0

Device Overview

The following sections provide a brief overview of the feature differences between the

P33 130nm and the P33 65nm devices.

2.1

P33 130nm Device

The P33 130nm device features 64-Mbit through 512-Mbit densities and AC/DC

specifications for 52MHz operation. Other features include high performance

synchronous-burst read, Buffered Enhanced Factory Programming (BEFP) with a 32-

word buffer, and an expanded OTP register space. Packaging options include industry-

standard Easy BGA, TSOP and Quad+ packages.

2.2

P33 65nm Device

The P33 65nm device features 64-Mbit through 2-Gbit densities and AC/DC

specifications for 52 MHz operation. This document covers specially 256-Mbit and 512-

Mbit (256M/256M) product information. Other features include high performance

synchronous-burst read, Buffered Enhanced Factory Programming (BEFP) with a 512-

word buffer, and an expanded OTP register space. The P33 65nm device also features

enhanced protection via a password access feature, which allows users to protect write

access to the pre-defined blocks. Please contact the Numonyx Sales for further details

concerning password access. Packaging options include industry-standard Easy BGA

and TSOP packages.