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AN3338 Datasheet(PDF) 35 Page - STMicroelectronics

Part # AN3338
Description  In recent years the variable speed motor control market has required high performance
PDF  72 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN3338 Datasheet(HTML) 35 Page - STMicroelectronics

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Doc ID 18441 Rev 4
35/72
AN3338
Electrical characteristics and functions
72
The value of the CBOOT capacitor should be calculated according to the application
condition and must take the following into account:
•
voltage across CBOOT must be maintained at a value higher than the undervoltage
lockout level for the IC driver. This enables the high side IGBT to work with a correct
gate voltage (lower dissipation and better overall performances). Bear in mind that if a
voltage below the UVLO threshold is applied on the bootstrap channel, the IC disables
itself (no output) without any fault signal.
•
the voltage across CBOOT is affected by different components such as drop across the
integrated bootstrap structure, drop across the low side IGBT, and others.
•
when the high side IGBT is on, the CBOOT capacitor discharges mainly to provide the
right IGBT gate charge but other phenomena must be considered such as leakage
currents, quiescent current, etc.
2.3.13
Bootstrap capacitor selection
A simple method to properly size the bootstrap capacitor considers only the amount of
charge that is needed when the high voltage side of the driver is floating and IGBT gate is
driven once. This approach does not take into account either the duty cycle of the PWM, or
the fundamental frequency of the current.
During the bootstrap capacitor charging phase, the low side IGBT is on and the voltage
across CBOOT (VCBOOT) can be calculated as follows:
Equation 10
where:
VCC: supply voltage of gate driver
VF: bootstrap diode forward voltage drop
VCE(sat)max: maximum emitter collector voltage drop of low side IGBT
VRDS(on): DMOS voltage drop
The dimension of the bootstrap capacitance CBOOT value is based on the minimum voltage
drop (
ΔVCBOOT) to guarantee when the high side IGBT is on, and must be:
Equation 11
under the condition:
Equation 12
where:
VGE(min): minimum gate emitter voltage of high side IGBT
VBS_thON: bootstrap turn-on undervoltage threshold (maximum value, see datasheet)
max
)
sat
(
CE
)
on
(
RDS
F
CC
CBOOT
V
V
V
V
V
−
−
−
=
max
)
sat
(
CE
(min)
GE
)
on
(
RDS
F
CC
CBOOT
V
V
V
V
V
V
−
−
−
−
=
Δ
thON
_
BS
(min)
CBOOT
V
V
>



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