PD46185092B_15 datasheet(16/36 Pages) RENESAS

Part #	PD46185092B

Description	18M-BIT QDRTM II SRAM 2-WORD BURST OPERATION

PDF	36 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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16 / 36 page

μPD46185092B, μPD46185182B, μPD46185362B

R10DS0112EJ0200 Rev.2.00

Page 16 of 35

Nov 09, 2012

Capacitance (TA = 25

°C, f = 1 MHz)

Parameter

Symbol

Test conditions

MIN.

MAX.

Unit

Input capacitance (Address, Control)

CIN

VIN = 0 V

Input / Output capacitance

CI/O

VI/O = 0 V

(D, Q, CQ, CQ#)

Clock Input capacitance

Cclk

Vclk = 0 V

Remark These parameters are periodically sampled and not 100% tested.

Thermal Characteristics

Parameter

Symbol

Substrate

Airflow

TYP.

Unit

Thermal resistance

θ ja

4-layer

0 m/s

16.5

°C/W

from junction to ambient air

1 m/s

13.2

°C/W

8-layer

0 m/s

15.5

°C/W

1 m/s

12.6

°C/W

Thermal characterization parameter

Ψ jt

4-layer

0 m/s

0.07

°C/W

from junction to the top center

1 m/s

0.13

°C/W

of the package surface

8-layer

0 m/s

0.06

°C/W

1 m/s

0.12

°C/W

Thermal resistance

θ jc

3.86

°C/W

from junction to case

PD46185092B Datasheet(PDF) 16 Page - Renesas Technology Corp

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