Memory organization

PM0054

8/28

Doc ID 15433 Rev 9

3.1

Low density STM8L101x microcontrollers

The low density STM8L101x memory features:

●

Up to 8 Kbytes of Flash program memory including up to 2 Kbytes of data EEPROM.

The whole memory array is divided into 128 pages of one block (64 bytes) each.

The Flash program memory is divided into 3 areas:

–

The user boot code area (UBC)

–

A configurable data EEPROM area (DATA)

–

The main program area

The DATA and main program areas can be write-protected independently by using the

memory access security mechanism (MASS).

The size of UBC, and DATA areas can be configured through option bytes.

●

One block (64 bytes) of option bytes of which 5 bytes are already used to configure

device hardware features. The option bytes can be programmed only in ICP/SWIM

mode.

Refer to Table 2: Low density STM8L101x memory partition for a detailed description of low

density STM8L101x memory partition.

Table 2.

Area

Page/block number

(1 page = 1 block)

Address

Option Byte

0

0x00 4800-0x00 483F

Flash program

memory

UBC and main

program memory

0

0x00 8000-0x00 803F

1

0x00 8040-0x00 807F

2

0x00 8080-0x00 80BF

3

0x00 80C0-0x00 80FF

……

95

…

Configurable data

96

0x00 9800-0x00 987F

-

…

0x00 9F80-0x00 9FBF

Up to 127

0x00 9FC0-0x00 9FFF

1.

The memory mapping is given for the devices featuring 8 Kbytes of Flash program memory including up to 2 Kbytes of data

EEPROM.

2.

The size of the data EEPROM area is configurable from 0 to 32 pages starting from the last page of the Flash program

memory down to page 96.