+

-

+

-

SENSOR

+

-

+

-

Active Band-Pass Filter

High Impedance Sensor Interface

CMOS Input Feature

High Side Current Sensing

Rail-to-Rail Input and Output Feature

LOAD

+

-

LMV841, LMV842, LMV844

SNOSAT1G – OCTOBER 2006 – REVISED FEBRUARY 2013

www.ti.com

Typical Applications

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Human Body Model

2 kV

Machine Model

200V

±300 mV

13.2V

Voltage at Input/Output Pins

−0.3V

Input Current

10 mA

Storage Temperature Range

−65°C to +150°C

+150°C

Soldering Information

Infrared or Convection (20 sec)

235°C

Wave Soldering Lead Temp. (10 sec)

260°C

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test

conditions, see the Electrical Characteristics Tables.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office / Distributors for

availability and specifications.

(3)

Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of

JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).

(4)

2

Submit Documentation Feedback

Copyright © 2006–2013, Texas Instruments Incorporated

Product Folder Links: LMV841 LMV842 LMV844