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JCT855CS Datasheet(PDF) 2 Page - JIEJIE MICROELECTRONICS CO.,Ltd |
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JCT855CS Datasheet(HTML) 2 Page - JIEJIE MICROELECTRONICS CO.,Ltd |
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2 / 5 page ![]() JCT655/855 Series JieJie Microelectronics CO. , Ltd TEL:+86-513-83639777 - 2 / 5- http://www.jjwdz.com Critical rate of rise of on-state current (IG=2×IGT) dI/dt 150 A /μs Peak gate current IGM 5 A Average gate power dissipation PG(AV) 1 W Peak gate power PGM 10 W ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Value Unit MIN. TYP. MAX. IGT VD=12V RL=33Ω 10 15 50 mA VGT - - 1.5 V VGD VD=VDRM Tj=125℃ RL=3.3KΩ 0.2 - - V IL IG=1.2IGT - - 100 mA IH IT=500mA - - 80 mA dV/dt VD=2/3VDRM Gate Open Tj=125℃ 700 - - V /μs STATIC CHARACTERISTICS Symbol Parameter Value(MAX) Unit VTM ITM=80A tp=380μs Tj=25℃ 1.6 V IDRM VD=VDRM VR=VRRM Tj=25℃ 10 μA IRRM Tj=125℃ 6 mA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case(AC) TO-3P(Ins) 0.65 ℃/W TO-247S /TO-247 0.6 |
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