TS32101

Final Datasheet

Rev 2.1

January 26, 2016

www.semtech.com

5 of 12

Semtech

Characteristics

ElectricalCharacteristics,T

Symbol

Parameter

Condition

Min

Typ

Max

Unit

VIN Supply Voltage

VIN

VoltageInput

1.75

5.5

V

I

IN-STBY

Quiescentcurrent

StandbyMode

EN=Low,VOUT=0V

5

10

uA

I

IN-LPM

OperatingLowPowerMode

InputCurrent

Iout=0uA

50

uA

VOUT Supply Current

I

OUT

Quiescentcurrent

NormalMode(Note1)

EN=High,Switching

3

mA

EN=High,Non-switching

500

uA

I

OUT-STBY

Quiescentcurrent,stby

EN=Low,Vout=5V

25

uA

I

OUT

Outputcurrent

EN=High,V

2

A

VIN Under Voltage Lockout (UVLO)

V

IN_UV

VINUnderVoltageDetectThreshold

IncreasingVin

1.5

V

V

IN-UV_HYST

VINUnderVoltageDetectHysteresis

150

mV

OSC

f

OSC

OscillatorFrequency

1.8

2

2.2

MHz

PG Open Drain Output

V

PG_THRESH

PowerGoodVoltageDetectThreshold

VoutIncreasing

90

%V

OUT

V

PG_HYST

PowerGoodVoltageDetectHysteresis

1

%V

OUT

I

OH-PG

High-LevelOutputLeakage

V

0.1

uA

V

OL-PG

Low-LevelOutputVoltage

I

0.4

V

EN Input

V

IH

HighLevelInputVoltage

1.5

V

V

IL

LowLevelInputVoltage

0.6

V

V

HYST

InputHysteresis

150

mV

I

IN-EN

InputLeakage

V

0.1

uA

V

0.1

uA

Thermal Shutdown

TSD

ThermalShutdownJunction

Temperature

150

170

C

TSD

HYST

TSDHysteresis

10

C

Note 1: large percentage of supply current due to power FET gate switching losses.