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LMV844MT/NOPB Datasheet(PDF) 6 Page - Texas Instruments

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Part # LMV844MT/NOPB
Description  LMV84x CMOS Input, RRIO, Low Power, Wide Supply Range, 4.5-MHz Operational Amplifiers
PDF  38 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LMV844MT/NOPB Datasheet(HTML) 6 Page - Texas Instruments

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LMV841, LMV842, LMV844
LMV841-Q1, LMV842-Q1, LMV844-Q1
SNOSAT1H – OCTOBER 2006 – REVISED JULY 2016
www.ti.com
Product Folder Links: LMV841 LMV842 LMV844 LMV841-Q1 LMV842-Q1 LMV844-Q1
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Copyright © 2006–2016, Texas Instruments Incorporated
(1)
Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device.
(2)
Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlations using
statistical quality control (SQC) method.
(3)
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(4)
This parameter is ensured by design and/or characterization and is not tested in production.
(5)
Positive current corresponds to current flowing into the device.
(6)
The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA) / θJA . All numbers apply for packages soldered directly onto a PCB.
(7)
Short circuit test is a momentary test.
(8)
Number specified is the slower of positive and negative slew rates.
6.6 Electrical Characteristics – 5 V
Unless otherwise specified, all limits are ensured for TA = 25°C, V
+ = 5 V, V− = 0 V, V
CM = V
+/2, and R
L > 10 MΩ to V
+/2.(1)
PARAMETER
TEST CONDITIONS
MIN(2)
TYP(3)
MAX(2)
UNIT
VOS
Input offset voltage
–500
±50
500
µV
at the temperature extremes
–800
800
TCVOS
Input offset voltage drift (4)
0.35
µV/°C
at the temperature extremes
–5
5
IB
Input bias current (4) (5)
0.3
10
pA
at the temperature extremes
300
IOS
Input offset current
40
fA
CMRR
Common-mode rejection ratio
LMV841
0V
≤ VCM ≤ 5V
86
112
dB
at the temperature extremes
80
Common-mode rejection ratio
LMV842 and LMV844
0V
≤ VCM ≤ 5V
81
106
dB
at the temperature extremes
79
PSRR
Power supply rejection ratio
2.7V
≤ V+ ≤ 12V, VO =
V+/2
86
108
dB
at the temperature extremes
82
CMVR
Input common-mode voltage
range
CMRR
≥ 50 dB, at the temperature extremes
–0.2
5.2
V
AVOL
Large signal voltage gain
RL = 2 kΩ
VO = 0.3V to 4.7V
100
125
dB
at the temperature extremes
96
RL = 10 kΩ
VO = 0.2V to 4.8V
100
133
dB
at the temperature extremes
96
VO
Output swing high,
(measured from V+)
RL = 2 kΩ to V
+/2
68
100
mV
at the temperature extremes
120
RL = 10 kΩ to V
+/2
32
50
mV
at the temperature extremes
70
Output swing low,
(measured from V-)
RL = 2 kΩ to V
+/2
78
120
mV
at the temperature extremes
140
RL = 10 kΩ to V
+/2
38
70
mV
at the temperature extremes
80
IO
Output short-circuit current (6) (7)
Sourcing VO = V
+/2
VIN = 100 mV
20
33
mA
at the temperature extremes
15
Sinking VO = V
+/2
VIN = −100 mV
20
28
mA
at the temperature extremes
15
IS
Supply current
Per Channel
0.96
1.5
mA
at the temperature extremes
2
SR
Slew rate (8)
AV = +1, VO = 4 VPP
10% to 90%
2.5
V/µs
GBW
Gain bandwidth product
4.5
MHz
Φm
Phase margin
67
Deg
en
Input-referred voltage noise
f = 1 kHz
20
nV/



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