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Elmos Semiconductor AG

Data Sheet

QM-No.: 25DS0046E.03

PRODUCTION DATA - JAN 15, 2015

Elmos Semiconductor AG reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.

KNX/ EIB TRANSCEIVER

E981.03

1 Absolute Maximum Ratings

Stresses beyond these absolute maximum ratings listed below may cause permanent damage to the device. These are stress rat-

ings only; operation of the device at these or any other conditions beyond those listed in the operational sections of this document

is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. All voltages

with respect to ground. Currents flowing into terminals are positive, those drawn out of a terminal are negative.

Description

Symbol

Min

Max

Unit

BUSP voltage

V

BUSP

-0.3

55

V

BUSP voltage during surge pulse (t < 150µs)

V

BUSP_surge

-0.3

65

V

Junction temperature

T

J

-45

150

°C

Storage temperature

T

S

-45

150

°C

ESD immunity (human body model, this test can be ap-

plied between any two pins of the IC)

V

ESD,hbm

-2

2

kV

Voltage at digital and analog VIO pins:

RESET, SAVE, XTAL, INT, SETVCC, OTEMP, SCS, SCK, MOSI,

MISO, RXD, TXD, BS0, BS1, AOUT

V

-0.3 V

V

Voltage at WK pin

V

WK

-0.3

40

V

Voltage at VST pin

V

VST

-0.3

40

V

Voltage at SW pin

V

SW

-5 V

V

Voltage at VCC pin

V

VCC

-0.3

8

V

Voltage at VIO pin

V

VIO

-0.3

7

V

Overall current through digital and analog VIO pins

(latch up immunity):

RESET, SAVE, XTAL, INT, SETVCC, OTEMP, SCS, SCK, MOSI,

MISO, RXD, TXD, BS0, BS1, WK, AOUT

I

-100

100

mA

Current through digital and analog VIO pins

(latch up immunity):

RESET, SAVE, XTAL, INT, SETVCC, OTEMP, SCS, SCK, MOSI,

MISO, RXD, TXD, BS0, BS1, WK

I

-70

70

mA

Voltage at pin EXTAL

V

EXTAL

-0.3

+3.6

V

Input voltage at CREC pin

V

CREC

-15 V

V

BUSP

Voltage at pins RTXH, RTXL

V

RTX

-0.3 V

V

BUSP

Current through RTXL pin

I

RTXL

0

800

mA

Current through AOUT pin

I

AOUT

-10

10

mA

Voltage at pin V33I pin

V

V33I

-0.3

+3.6

V

Voltage at pin V20

V

V20

-0.3 V

V

2 Recommended Operation Conditions

Description

Condition

Symbol

Min

Typ

Max

Unit

Ambient temperature

T

amb

-25

25

85

°C

C

ST

270

330

1000

µF

C

R

ESR,CST

0.1

1

Ω

C

V

CST

35

V

Parallel ceramic capacitance VST to GND

C

CER,ST

80

100

120

nF

Average bus idle voltage

V

BUSP

20

30

33

V

C

20

10

22

µF

C20 equivalent series resistance

R

ESR,C20

0.1

1

Ω