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LE25S161 Datasheet(PDF) 46 Page - ON Semiconductor

Part # LE25S161
Description  Serial Flash Memory
PDF  54 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

LE25S161 Datasheet(HTML) 46 Page - ON Semiconductor

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LE25S161
www.onsemi.com
46
16. Specifications
16-1. Absolute Maximum Ratings
Parameter
Symbol
Conditions
Ratings
unit
Maximum supply voltage
With respect to VSS
−0.5 to +2.6
V
DC voltage (all pins)
With respect to VSS
−0.5 to VDD+0.5
V
Storage temperature
Tstg
−55 to +150
°C
16-2. Operating Conditions
Parameter
Symbol
Conditions
Ratings
unit
Operating supply voltage
1.65 to 1.95
V
Operating
ambient temperature
−40 to +90
°C
16-3. Data retention, Rewriting cycles
Parameter
Symbol
condition
min
max
unit
Rewrite Cycles
cycRW
Status resister write
100,000
cycles/
Sector
Program/Erase
100,000
Data retention
tDRET
20
year
16-4. Pin Capacitance at Ta=25
°C, f=1MHz
Parameter
Symbol
Conditions
Ratings
unit
max
Output pin capacitance
CSO
VSO=0V
12
pF
Input pin Capacitance
CIN
VIN=0V
6
pF
Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values for
some of the sampled devices.
16-5. AC Test Conditions
Input pulse level ··········· 0.2VDD to 0.8VDD
Input rising/falling time ·· 5ns
Input timing level ········· 0.3VDD, 0.7VDD
Output timing level ······· 1/2
×VDD
Output load················· 15pF
Note: As the test conditions for "typ", the measurements are conducted using 1.8V for VDD at room temperature.
Input / Output timing level
0.7VDD
1/2VDD
0.3VDD
0.8VDD
0.2VDD
Input level
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.



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