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HT66F0176 Datasheet(PDF) 17 Page - Holtek Semiconductor Inc |
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HT66F0176 Datasheet(HTML) 17 Page - Holtek Semiconductor Inc |
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17 / 165 page  Rev. 1.20 16 ����st 2�� 201� Rev. 1.20 1� ����st 2�� 201� HT66F0176 A/D Flash MCU with EEPROM HT66F0176 A/D Flash MCU with EEPROM Input/Output Characteristics Ta=25°C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VIL Inp�t Low Volta�e for I/O Ports 5V — 0 — 1.5 V — — 0 — 0.2VDD VIH Inp�t Hi�h Volta�e for I/O Ports 5V — 3.5 — 5.0 V — — 0.�VDD — VDD IOL Sink C�rrent for I/O Pins 3V VOL=0.1VDD 16 32 — m� 5V 32 64 — IOH So�rce C�rrent for I/O Pins 3V VOH=0.9VDD� PxPS[n+1:n]=00� (x=�� B or C� n=0 or 2) -1.0 -2.0 — m� 5V -2.0 -4.0 — 3V VOH=0.9VDD� PxPS[n+1:n]=01� (x=�� B or C� n=0 or 2) -1.�5 -3.5 — 5V -3.5 -�.0 — 3V VOH=0.9VDD� PxPS[n+1:n]=10� (x=�� B or C� n=0 or 2) -2.5 -5.0 — 5V -5.0 -10.0 — 3V VOH=0.9VDD� PxPS[n+1:n]=11� (x=�� B or C� n=0 or 2) -5.5 -11.0 — 5V -11.0 -22.0 — RPH P�ll-hi�h Resistance for I/O Ports(Note) 3V — 20 60 100 kΩ 5V — 10 30 50 tTCK TM Clock Inp�t Minim�m P�lse Width — — 0.3 — — μs tINT Interr�pt Inp�t Pin Minim�m P�lse Width — — 10 — — μs Note:TheRPHinternalpullhighresistancevalueiscalculatedbyconnectingtogroundandenablingtheinputpin withapull-highresistorandthenmeasuringtheinputsinkcurrentatthespecifiedsupplyvoltagelevel. DividingthevoltagebythismeasuredcurrentprovidestheRPHvalue. Memory Characteristics Ta= -40°C~�5°C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VRW VDD for Read / Write — — VDDmin — VDDmax V Program Flash / Data EEPROM Memory tDEW Erase / Write cycle time — — — 2 4 ms IDDPGM Pro�rammin� / Erase c�rrent on VDD — — — — 5.0 m� EP Cell End�rance — — 100K — — E/W tRETD ROM Data Retention time — Ta=25°C — 40 — Year RAM Data Memory VDR R�M Data Retention volta�e — Device in SLEEP Mode 1.0 — — V |
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