| Electronic Components Datasheet Search |
|
MB9B320M Datasheet(PDF) 90 Page - Cypress Semiconductor |
|
|
|||||||||||||||||||||||||||||
MB9B320M Datasheet(HTML) 90 Page - Cypress Semiconductor |
|
90 / 108 page ![]() Document Number: 002-05652 Rev. *D Page 90 of 108 MB9B320M Series 12.9 Flash Memory Write/Erase Characteristics 12.9.1 Write / Erase time ( VCC = 2.7V to 5.5V, TA = - 40°C to + 105°C) Parameter Value Unit Remarks Typ Max Sector erase time Large Sector 1.1 2.7 s Includes write time prior to internal erase Small Sector 0.3 0.9 Half word (16-bit) write time 16 310 μs Not including system-level overhead time Chip erase time 6.8 18 s Includes write time prior to internal erase *: The typical value is immediately after shipment, the maximum value is guarantee value under 10,000 cycle of erase/write. 12.9.2 Write cycles and data hold time Erase/write cycles (cycle) Data hold time (year) Remarks 1,000 20* 10,000 10* *: At average + 85°C |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |