PD64012 datasheet(5/16 Pages) ETC

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PD64012

12-CHANNEL PoE MANAGER

Pmain = Vmain x I main

Pmain typ. = 48 VDC x 10 mA = 0.480 W.

Pmain max. = 57 VDC x 15 mA = 0.855 W

Device Power Dissipation – the PD64012 incorporates 12 power MOSFETs, each characterized by:

Resistance from drain-source Rds(on) = 0.3 Ω typ. ; 0.5 Ω max.

Drain-source current Ids = 360 mA max.

Maximum power dissipation PMOSFET max. of a single PD64012 device (for 12 MOSFETs) :

[(Ids)

2 x R

ds(on)] x 12 = [(0.36 A)

2 x 0.5 Ω] x 12 = 0.78 W

Charge pump (see Analog Section of Block Diagram Description, hereafter) power dissipation PCP is 0.21 W.

Total power dissipation Ptotal by device, under maximum conditions:

Ptotal = Pmain max. + PMOSFET max. + PCP = 0.855 W + 0.78 W + 0.21 W = 1.845 W

lim

cut

min

UDL_S

UDL

Port off

OVL

cut

OVL_S

channel

Port 1

Port 2

Figure 2: Power Limits

Protection Mechanism

The PD64012 includes internal thermal protection to avoid junction overheat. Three types of temperature sensors

are integrated into the device: two are used for protection and one for temperature monitoring.

Hi-temp protection – the device contains thermal shutdowns. This protection system is activated in extreme

conditions.

Lo-temp protection – there are thermal sensors that are intended to protect the functionality of the device, in

cases of temperature rise.

Indicator sensors – four temperature sensors monitor the local temperature in the device. Their average is also

calculated by the PD64012. All values are stored in internal registers for data retrieval. The register values are

calculated by:

Decimal value = 684 - 1.514 x [(Tjunc)+ 40 °C].

www.powerdsine.com

Information in this document subject

06-0003-058 (Rev. 2.8) / 5 August 2004

to change without prior notice.

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