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IMX7SCEC Datasheet(PDF) 38 Page - NXP Semiconductors |
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IMX7SCEC Datasheet(HTML) 38 Page - NXP Semiconductors |
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38 / 152 page ![]() Electrical characteristics i.MX 7Solo Family of Applications Processors Datasheet, Rev. 5, 07/2017 NXP Semiconductors 38 • General Purpose I/O (GPIO) • Double Data Rate I/O (DDR) for LPDDR3 and DDR3 modes • Differential I/O (CCM_CLK1) 4.5.1 General purpose I/O (GPIO) DC parameters Table 22 shows DC parameters for GPIO pads. The parameters in Table 22 are guaranteed per the operating ranges in Table 9, unless otherwise noted. 4.5.2 DDR I/O DC electrical characteristics The DDR I/O pads support DDR3/DDR3L, LPDDR2, and LPDDR3 operational modes. The DDR Memory Controller (DDRMC) is designed to be compatible with JEDEC-compliant SDRAMs. The DDRC supports the following memory types: • DDR3 SDRAM compliant to JESD79-3E DDR3 JEDEC standard release July, 2010 • LPDDR2 SDRAM compliant to JESD209-2B LPDDR2 JEDEC standard release June, 2009 • LPDDR3 SDRAM compliant to JESD209-3B LPDDR3 JEDEC standard release August, 2013 Table 22. GPIO DC Parameters Parameter Symbol Test Conditions Min Max Units High-level output voltage VOH IOH= –1.8mA, –3.6mA, –7.2mA, –10.8mA 0.8 × OVDD OVDD V Low-level output voltage VOL IOL=1.8mA, 3.6mA, 7.2mA, 10.8mA 0 0.2 × OVDD V High-level input voltage VIH —0.7 × OVDD OVDD + 0.3 V Low-level input voltage VIL —–0.3 0.3 × OVDD V Input hysteresis VHYS —0.15 — V Pull-up resistor (5_k Ω PU) — VDD = 1.8 ± 0.15 V 5.94 5.98 K Ω Pull-up resistor (5_k Ω PU) — VDD = 3.3 ± 0.3 V 4.8 5.3 K Ω Pull-up resistor (47_k Ω PU) — VDD = 1.8 ± 0.15 V 46.1 50.6 K Ω Pull-up resistor (47_k Ω PU) — VDD =3.3 ± 0.3 V 45.8 49.8 K Ω Pull-up resistor (100_k Ω PU) — VDD = 1.8 ± 0.15 V 97.5 105.9 K Ω Pull-up resistor (100_k Ω PU) — VDD = 3.3 ± 0.3 V 101 105 K Ω Pull-down resistor (100_k Ω PU) — VDD = 1.8 ± 0.15 V 101 108.6 K Ω Pull-down resistor (100_k Ω PD) — VDD = 3.3 ± 0.3 V 101 108 K Ω Input current (no PU/PD) IOZ —–5 5 μΑ Sink/source current in Push-Pull mode — Driving currents (@100MHz, VOL/H = 0.5×OVDD, SS, 125°C) OVDD = 2.7 V –32.9 32.9 mA |
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