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CF52012 Datasheet(PDF) 32 Page - Intel Corporation

Part # CF52012
Description  Quad-Serial Configuration
PDF  48 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

CF52012 Datasheet(HTML) 32 Page - Intel Corporation

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Figure 9.
Write Disable Operation Timing Diagram
Operation Code (04h)
DATA0
nCS
DCLK
DATA[3:1]
High Impedance
0
1
2
3
4
5
6
7
1.7.4. Read Bytes Operation (03h)
When you execute the read bytes operation, you first shift in the read bytes operation
code, followed by a 3-byte addressing mode (A[23..0]) or a 4-byte addressing mode
(A[31..0]). Each address bit must be latched in on the rising edge of the DCLK
signal. After the address is latched in, the memory contents of the specified address
are shifted out serially on the DATA1 pin, beginning with the MSB. For reading Raw
Programming Data File (.rpd), the content is shifted out serially beginning with the
LSB. Each data bit is shifted out on the falling edge of the DCLK signal. The maximum
DCLK
frequency during the read bytes operation is 50 MHz.
Figure 10.
Read Bytes Operation Timing Diagram
To access the entire EPCQ256 or EPCQ512/A memory, use 4-byte addressing mode. In the 4-byte addressing
mode, the address width is 32-bit address.
nCS
DCLK
DATA0
DATA1
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32 33 34 35 36 37 38 39
Operation Code (03h)
24-Bit Address
23 22 21
3
2
1
0
7
7
6
5
4
3
2
1
0
MSB
MSB
High Impedance
DATA Out 1
DATA Out 2
The first byte address can be at any location. The device automatically increases the
address to the next higher address after shifting out each byte of data. Therefore, the
device can read the whole memory with a single read bytes operation. When the
device reaches the highest address, the address counter restarts at 0x000000,
allowing the memory contents to be read out indefinitely until the read bytes
operation is terminated by driving the nCS signal high. If the read bytes operation is
shifted in while a write or erase cycle is in progress, the operation is not executed and
does not affect the write or erase cycle in progress.
Related Information
Write Operation Timing on page 40
The Write Operation Parameters provides more information about tWS, tES and tWB.
1. Quad-Serial Configuration (EPCQ) Devices Datasheet
CF52012 | 2018.06.01
Quad-Serial Configuration (EPCQ) Devices Datasheet
32



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