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LMX2336UTM Datasheet(PDF) 8 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LMX2336UTM
Description  PLLatinum Ultra Low Power Dual Frequency Synthesizer for RF Personal Communications
PDF  48 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMX2336UTM Datasheet(HTML) 8 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Notes 1,
2, 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
V
CC to GND
−0.3V to +6.5V
V
P RF1 to GND
−0.3V to +6.5V
V
P RF2 to GND
−0.3V to +6.5V
Voltage on any pin to GND (V
I)
V
I must be < +6.5V
−0.3V to V
CC+0.3V
Storage Temperature Range (T
S)
−65˚C to +150˚C
Lead Temperature (solder 4 s) (T
L)
+260˚C
16-Pin TSSOP
θ
JA Thermal
Impedance
137.1˚C/W
20-Pin TSSOP
θ
JA Thermal
Impedance
114.5˚C/W
16-Pin CSP
θ
JA Thermal Impedance
130˚C/W
24-Pin CSP
θ
JA Thermal Impedance
112˚C/W
Recommended Operating
Conditions (Note 1)
Power Supply Voltage
V
CC to GND
+2.7V to +5.5V
V
P RF1 to GND
V
CC to +5.5V
V
P RF2 to GND
V
CC to +5.5V
Operating Temperature (T
A)
−40˚C to +85˚C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended Operating Conditions indicate condi-
tions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test condi-
tions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed.
Note 2: This device is a high performance RF integrated circuit with an ESD
rating <2 kV and is ESD sensitive. Handling and assembly of this device
should only be done at ESD protected work stations.
Note 3: GND=0V
Electrical Characteristics
V
CC =VP RF1=VP RF2 = 3.0V, −40˚C
≤ T
A
≤ +85˚C, unless otherwise specified
Symbol
Parameter
Conditions
Value
Units
Min
Typ
Max
I
CC PARAMETERS
I
CCRF1 + RF2
Power Supply
Current, RF1 + RF2
Synthesizers
LMX2335U
Clock, Data and LE = GND
OSC
in = GND
PWDN RF1 Bit = 0
PWDN RF2 Bit = 0
3.0
4.0
mA
LMX2336U
3.5
4.5
mA
I
CCRF1
Power Supply
Current, RF1
Synthesizer Only
LMX2335U
Clock, Data and LE = GND
OSC
in = GND
PWDN RF1 Bit = 0
PWDN RF2 Bit = 1
1.5
2.0
mA
LMX2336U
2.0
2.5
mA
I
CCRF2
Power Supply
Current, RF2
Synthesizer Only
LMX2335U
Clock, Data and LE = GND
OSC
in = GND
PWDN RF1 Bit = 1
PWDN RF2 Bit = 0
1.5
2.0
mA
LMX2336U
1.5
2.0
I
CC-PWDN
Powerdown Current
LMX2335U/
Clock, Data and LE = GND
OSC
in = GND
PWDN RF1 Bit = 1
PWDN RF2 Bit = 1
1.0
10.0
µA
LMX2336U
RF1 SYNTHESIZER PARAMETERS
f
IN RF1
RF1 Operating
Frequency
LMX2335U
100
1200
MHz
LMX2336U
200
2000
MHz
N
RF1
RF1 N Divider Range
Prescaler = 64/65
(Note 4)
192
131135
Prescaler = 128/129
(Note 4)
384
262143
R
RF1
RF1 R Divider Range
3
32767
FφRF1
RF1 Phase Detector Frequency
10
MHz
Pf
IN RF1
RF1 Input Sensitivity
2.7V
≤ V
CC
≤ 3.0V
(Note 5)
−15
0
dBm
3.0V < V
CC
≤ 5.5V
(Note 5)
−10
0
dBm
www.national.com
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