Rev.1.40

Sep 30, 2004

page 16 of 26

REJ09B0034-0140Z

R8C/11 Group

5. Electrical Characteristics

Byte program time

Block erase time

Program, Erase voltage

Read voltage

50

0.4

µs

Parameter

Standard

Min.

Typ.

Max

Unit

Note

Measuring condition

Symbol

–

–

–

–

Program, Erase temperature

2.7

2.7

0

400

9

5.5

5.5

60

s

V

V

°C

–

Time delay from suspend request until erase

suspend

td(SR-ES)

–

Program/erase cycle

8

ms

100

cycle

Vcc=5.0V, Topr=25 °C

Vcc=5.0V, Topr=25 °C

Data-retention duration

–

Topr=55 °C

20

year

Table 5.4 Flash Memory Version Electrical Characteristics

Table 5.5 Voltage Detection Circuit Electrical Characteristics

Symbol

Standard

Typ.

Unit

Measuring condition

Min.

Max.

Parameter

Vdet

Voltage detection level

V

3.8

4.3

NOTES:

1. The measuring condition is Vcc=AVcc=2.7V to 5.5V and Topr= -40°C to 85 °C.

2. This shows the time until the voltage detection interrupt request is generated since the voltage passes Vdet.

3. This shows the required time until the voltage detection circuit operates when setting to "1" again after setting the VC27 bit in the VCR2

register to “0”

40

nA

Voltage detection circuit self consumption current

td(E-A)

VC27=1, VCC=5.0V

3.3

20

600

µs

µs

Vccmin

Minimum value of microcomputer operation voltage

2.7

V

FMR46

Erase-suspend request

(interrupt request)

Figure 5.2 Time delay from Suspend Request until Erase Suspend