Rev.1.40

Sep 30, 2004

page 18 of 26

REJ09B0034-0140Z

R8C/11 Group

5. Electrical Characteristics

Table 5.10 Electrical Characteristics (1)

[Vcc=5V]

Symbol

"L" output voltage

"H" output voltage

Standard

Typ.

Unit

Measuring condition

V

V

V

Min.

Max.

Parameter

V

Hysteresis

"H" input current

"L" input current

RAM retention voltage

0.2

V

µA

At stop mode

2.0

Feedback resistance

M

Ω

Pull-up resistance

167

k

Ω

30

125

Note

Drive ability HIGH

Drive ability LOW

V

V

V

Drive capacity HIGH

Drive capacity LOW

2.0

0.45

V

2.0

2.0

V

Drive capacity HIGH

Drive capacity LOW

2.0

2.0

V

RESET

0.2

1.0

2.2

V

5.0

µA

50

1.0

Low-speed on-chip oscillator frequency

40

250

kHz

Drive capacity LOW

0.45

V

V

Symbol

Standard

Typ.

Unit

Measuring condition

Min.

Max.

Parameter

High-speed on-chip oscillator frequency 1 / {td(HRoffset)+td(HR)} when the

reset is released

NOTES:

1. The measuring condition is Vcc=AVcc=5.0 V and Topr=25 °C.

High-speed on-chip oscillator period adjusted unit

MHz

ns

VCC=5.0V, Topr=25 °C

8

61

in the HR register

Settable high-speed on-chip oscillator minimum period

High-speed on-chip oscillator temperature dependence(1)

td(HRoffset)

td(HR)

VCC=5.0V, Topr=25 °C

1

ns

Frequency fluctuation in temperature range

of -10 °C to 50 °C

±5

%

%

High-speed on-chip oscillator temperature dependence(2)

Frequency fluctuation in temperature range

of -40 °C to 85 °C

±10

610

Table 5.8 High-speed On-Chip Oscillator Circuit Electrical Characteristics

Symbol

Standard

Typ.

Unit

Measuring condition

Min.

Max.

Parameter

2

Note

1: The measuring condition is Vcc=AVcc=2.7 to 5.5 V and Topr=25 °C.

2: This shows the wait time until the internal power supply generating circuit is stabilized during power-on.

3: This shows the time until BCLK starts from the interrupt acknowledgement to cancel stop mode.

150

td(R-S)

ms

td(P-R)

µs

Table 5.9 Power Circuit Timing Characteristics