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SPC584BX Datasheet(PDF) 130 Page - STMicroelectronics |
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SPC584BX Datasheet(HTML) 130 Page - STMicroelectronics |
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130 / 142 page ![]() Revision history SPC584Bx 130/142 DS11701 Rev 4 7 Revision history Table 75. Document revision history Date Revision Changes 06-Oct-2016 1 Initial version. 13-Dec-2016 2 Changed Microsoft Excel® workbook attached to this document (was SPC584Bx_IO_Definition_v1.xlsx dated July 26, 2016). For details, refer to the sheet Revision History of the attached file “SPC584Bx_IO_Definition_v2.xlsx”. Section 3.2: Absolute maximum ratings: Table 4: Absolute maximum ratings: For parameter “IINJ”, text “DC” removed from description. Section 3.3: Operating conditions: Table 5: Operating conditions: – Footnote “1.260 V - 1.290 V range .. temperature profile” updated to Text “... average supply value below or equal to 1.236 V ...” – In parameter “IINJ1” description, text “DC” removed. Section 3.7: Device consumption: Table 8: Device consumption: – For parameter “IDDSSWU1”, typical value updated from “TBD” to “1 mA” – For parameter “IDDSSWU1”, description updated to “SSWU running over...ADC off” – For parameter “IDDSSWU2”, typical value updated from “TBD” to “3.5 mA” – For parameter “IDDSSWU2”, description updated to “SSWU running over...ADC on” – For parameter “IDDSTOP”, typical value updated from “TBD” to “18” for TJ=25 °C – For parameter “IDDSTDBY8”, typical value updated from “TBD” to “85” for TJ=25 °C – For parameter “IDDSTDBY32”, typical value updated from “TBD” to “100” for TJ=25 °C – For parameter “IDDSTDBY128”, typical value updated from “TBD” to “160” for TJ=25 °C Section 3.8: I/O pad specification: Section 3.8.2: I/O output DC characteristics: – Updated “WEAK” to “WEAK/SLOW” – Updated “STRONG” to “STRONG/FAST” – Updated “VERY STRONG” to “VERY STRONG / VERY FAST” Table 9: I/O pad specification descriptions: – Added “Standby Pads” Added footnote “Logic level is configurable in running mode while it is CMOS...” |
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