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FS32R274VCK2VMM Datasheet(PDF) 22 Page - NXP Semiconductors |
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FS32R274VCK2VMM Datasheet(HTML) 22 Page - NXP Semiconductors |
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22 / 78 page ![]() 1. Measured when pad = 0 V 2. Measured when pad = VDD_HV_IO 3. Measured when pad is sourcing 2 mA 4. Measured when pad is sinking 2 mA 5. Ioh/Iol is derived from spice simulations. These values are NOT guaranteed by test. 5.1.1 RGMII pad DC electrical characteristics Table 14. RGMII pad DC electrical specifications Symbol Parameter Value Unit Min Max Vih CMOS Input Buffer High Voltage 0.65 x VDD_HV_IO VDD_HV_IO + 0.3 V Vil CMOS Input Buffer Low Voltage -0.3 0.35 x VDD_HV_IO V Pull_Ioh Weak Pullup Current1 10 55 µA Pull_Iol Weak Pulldown Current2 10 55 µA Iinact_d Digital Pad Input Leakage Current (weak pull inactive) -2.5 2.5 µA Voh Output High Voltage3 0.8 x VDD_HV_IO — V Vol Output Low Voltage4 — 0.2 * VDD_HV_IO V Ioh_f Full drive Ioh5 8 26 mA Iol_f Full drive Iol6 8 24 mA 1. Measured when pad = 0 V 2. Measured when pad = VDD_HV_IO 3. Measured when pad is sourcing 2 mA 4. Measured when pad is sinking 2 mA 5. Ioh_f value is measured with 0.8*VDDE applied to the pad. 6. Iol_f is measured when 0.2*VDDE is applied to the pad. 5.2 I/O pad AC specifications AC Parameters are specified over the full operating junction temperature range of -40°C to +150°C and for the full operating range of the VDD_HV_IO supply defined in Table 7. Table 15. Functional Pad electrical characteristics Symbol Prop. Delay (ns)1 L>H/H>L Rise/Fall Edge (ns)2 Drive Load (pF) SIUL2_MSCR[SRC ] Min Max Min Max MSB,LSB pad_sr_hv (output) 2.5/2.5 8.25/7.5 0.7/0.6 3/3 50 11 6.4/5 19.5/19.5 2.5/2.0 12/12 200 2.2/2.5 8/8 0.4/0.3 3.5/3.5 25 10 2.9/3.5 12.5/11 1.0/0.8 6.5/6.5 50 11/8 35/31 6.5/3.0 25/21 200 Table continues on the next page... I/O Parameters S32R274/S32R264 Series Data Sheet, Rev. 6, 06/2021 22 NXP Semiconductors |
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