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FS32R274VCK2VMM Datasheet(PDF) 22 Page - NXP Semiconductors

Part # FS32R274VCK2VMM
Description  S32R274/S32R264 Series Data Sheet
PDF  78 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

FS32R274VCK2VMM Datasheet(HTML) 22 Page - NXP Semiconductors

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1. Measured when pad = 0 V
2. Measured when pad = VDD_HV_IO
3. Measured when pad is sourcing 2 mA
4. Measured when pad is sinking 2 mA
5. Ioh/Iol is derived from spice simulations. These values are NOT guaranteed by test.
5.1.1 RGMII pad DC electrical characteristics
Table 14. RGMII pad DC electrical specifications
Symbol
Parameter
Value
Unit
Min
Max
Vih
CMOS Input Buffer High Voltage
0.65 x VDD_HV_IO
VDD_HV_IO + 0.3
V
Vil
CMOS Input Buffer Low Voltage
-0.3
0.35 x VDD_HV_IO
V
Pull_Ioh
Weak Pullup Current1
10
55
µA
Pull_Iol
Weak Pulldown Current2
10
55
µA
Iinact_d
Digital Pad Input Leakage Current (weak pull
inactive)
-2.5
2.5
µA
Voh
Output High Voltage3
0.8 x VDD_HV_IO
—
V
Vol
Output Low Voltage4
—
0.2 * VDD_HV_IO
V
Ioh_f
Full drive Ioh5
8
26
mA
Iol_f
Full drive Iol6
8
24
mA
1. Measured when pad = 0 V
2. Measured when pad = VDD_HV_IO
3. Measured when pad is sourcing 2 mA
4. Measured when pad is sinking 2 mA
5. Ioh_f value is measured with 0.8*VDDE applied to the pad.
6. Iol_f is measured when 0.2*VDDE is applied to the pad.
5.2 I/O pad AC specifications
AC Parameters are specified over the full operating junction temperature range of -40°C
to +150°C and for the full operating range of the VDD_HV_IO supply defined in Table 7.
Table 15. Functional Pad electrical characteristics
Symbol
Prop. Delay (ns)1
L>H/H>L
Rise/Fall Edge (ns)2
Drive Load (pF)
SIUL2_MSCR[SRC
]
Min
Max
Min
Max
MSB,LSB
pad_sr_hv
(output)
2.5/2.5
8.25/7.5
0.7/0.6
3/3
50
11
6.4/5
19.5/19.5
2.5/2.0
12/12
200
2.2/2.5
8/8
0.4/0.3
3.5/3.5
25
10
2.9/3.5
12.5/11
1.0/0.8
6.5/6.5
50
11/8
35/31
6.5/3.0
25/21
200
Table continues on the next page...
I/O Parameters
S32R274/S32R264 Series Data Sheet, Rev. 6, 06/2021
22
NXP Semiconductors



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