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MPC8313E Datasheet(PDF) 16 Page - Freescale Semiconductor, Inc

Part # MPC8313E
Description  PowerQUICC??II Pro Processor Hardware Specifications
PDF  88 Pages
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MPC8313E Datasheet(HTML) 16 Page - Freescale Semiconductor, Inc

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MPC8313E PowerQUICC™ II Pro Processor Hardware Specifications, Rev. 0
16
Freescale Semiconductor
DDR and DDR2 SDRAM
6
DDR and DDR2 SDRAM
This section describes the DC and AC electrical specifications for the DDR SDRAM interface. Note that
DDR SDRAM is GVDD(typ) = 2.5 V and DDR2 SDRAM is GVDD(typ) = 1.8 V.
6.1
DDR and DDR2 SDRAM DC Electrical Characteristics
Table 11 provides the recommended operating conditions for the DDR2 SDRAM component(s) when
GVDD(typ) = 1.8 V.
Table 12 provides the DDR2 capacitance when GV
DD(typ) = 1.8 V.
Table 11. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
1.7
1.9
V
1
I/O reference voltage
MVREF
0.49
× GVDD
0.51
× GVDD
V2
I/O termination voltage
VTT
MVREF –0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF + 0.125
GVDD +0.3
V
Input low voltage
VIL
–0.3
MVREF – 0.125
V
Output leakage current
IOZ
–9.9
9.9
μA4
Output high current (VOUT = 1.420 V)
IOH
–13.4
—
mA
Output low current (VOUT = 0.280 V)
IOL
13.4
—
mA
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to be equal to 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREF may not exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
equal to MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
≤ VOUT ≤ GVDD.
Table 12. DDR2 SDRAM Capacitance for GVDD(typ)=1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS, DQS
CIO
68
pF
1
Delta input/output capacitance: DQ, DQS, DQS
CDIO
—0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 1.8 V ± 0.090 V, f = 1 MHz, TA =25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.



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