M30302FAPFP datasheet(26/57 Pages) RENESAS

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M16C/30P Group

5. Electrical Characteristics

Rev.1.22

Mar 30, 2007

Page 26 of 53

REJ03B0088-0122

NOTES:

Referenced to VCC1=4.5 to 5.5V, 3.0 to 3.6V at Topr = 0 to 60

°C (U3, U5) unless otherwise specified.

Program and Erase Endurance refers to the number of times a block erase can be performed.

If the program and erase endurance is 100, each block can be erased 100 times.

For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as

one program and erase endurance. Data cannot be written to the same address more than once without erasing the block.

(Rewrite prohibited)

Maximum number of E/W cycles for which operation is guaranteed.

Topr = -40 to 85

°C (U3) / -20 to 85 °C (U5).

Table 5.4

Flash Memory Version Electrical Characteristics (1)

Symbol

Parameter

Standard

Unit

Min.

Typ.

Max.

−

Program and Erase Endurance (2)

100(3)

cycle

−

Word Program Time (VCC1=5.0V

)

200

μs

−

Lock Bit Program Time

200

μs

−

Block Erase Time

(VCC1=5.0V

)

4-Kbyte block

0.3

−

8-Kbyte block

0.3

−

32-Kbyte block

0.5

−

64-Kbyte block

0.8

tPS

Flash Memory Circuit Stabilization Wait Time

μs

−

Data Hold Time (4)

year

Table 5.5

Flash Memory Version Program / Erase Voltage and Read Operation Voltage

Characteristics

Flash Program, Erase Voltage

Flash Read Operation Voltage

VCC1 = 3.3 ± 0.3 V or 5.0 ± 0.5 (Topr = 0°C to 60°C )

VCC1=2.7 to 5.5 V (Topr = -40°C to 85°C (U3)

-20

°C to 85°C (U5))

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