M65KG256AB datasheet(41/51 Pages) STMICROELECTRONICS

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M65KG256AB

7 DC and AC parameters

41/51

Figure 20.

Read followed by Write using the Burst Read Terminate Command (BST)

If the Write operation is performed to the same bank and row than the Read operation, the Burst Read Terminate command

(BST) must be issued to terminate the Read operation.The WRIT command can then be issued tBSTW (ŠtBSTW) after the

BST command.

If the Write operation is performed to the same bank but to a different row, the bank must be precharged to interrupt the

Read operation. tRP after the Precharge command, issue the ACT command. The WRIT command can then be issued tRCD

after the ACT command.

If the Write operation is performed to a different bank and to an active row, the sequence is identical to the one described in

Note 1

If the Write operation is performed to a different bank and to an idle row, the bank must be precharged independently from

the Read operation. tRP after the Precharge command, issue the ACT command. The WRIT command can then be issued

tRCD after the ACT command.

Command

DO1

UDQS,

LDQS

DQ0-DQ15

READ

BST

NOP

tBSTZ (

≥tBSTZ)

DO0

ai11209

WRIT

NOP

Note: 1. Burst Length = 4

2. CAS Latency = 3 (CL)

UDQM,

LDQM

DI0 DI1 DI2 DI3

tBSTZ ( = CL)

Data Output

Data Input

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