4

LM3017

SNOSC66D – MARCH 2012 – REVISED SEPTEMBER 2016

www.ti.com

Product Folder Links: LM3017

Submit Documentation Feedback

Copyright © 2012–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

VIN to PGND, AGND

–0.3

20

V

FB, COMP, VCC,DR to PGND, AGND

–0.2

6

V

EN/MODE

–0.2

5.5

V

VG

–0.3

VIN + 6

V

ISEN to PGND, AGND

VIN – 0.3

VIN

V

Peak low side driver output current

1

A

Power dissipation

Internally limited

Junction temperature, TJ

150

°C

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1500

V

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VIN

Supply voltage

5.4

18

V

TJ

Junction temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

LM3017

UNIT

NKL (WQFN)

10 PINS

RθJA

Junction-to-ambient thermal resistance

79.2

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

29.8

°C/W

RθJB

Junction-to-board thermal resistance

21.4

°C/W

ψJT

Junction-to-top characterization parameter

0.6

°C/W

ψJB

Junction-to-board characterization parameter

20.7

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

—

°C/W