FCPF20N60. datasheet(4/11 Pages) ONSEMI

4 / 11 page

FCP20N60 / FCPF20N60 Rev. C0

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

-1

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

Notes :

1. 250μs Pulse Test

2. T

C = 25°C

DS, Drain-Source Voltage [V]

246

Note

1. V

DS = 40V

2. 250μs Pulse Test

-55°C

150°C

25°C

GS , Gate-Source Voltage [V]

0.0

0.1

0.2

0.3

0.4

GS = 20V

GS = 10V

Note : T

J = 25°C

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

25°C

150°C

Notes :

1. V

GS = 0V

2. 250μs Pulse Test

SD , Source-Drain Voltage [V]

-1

1000

2000

3000

4000

5000

6000

7000

8000

9000

10000

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

Notes :

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

102030

40506070

DS = 250V

DS = 100V

DS = 400V

Note : I

D = 20A

G, Total Gate Charge [nC]

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