©2008 Fairchild Semiconductor Corporation

FCP20N60 / FCPF20N60 Rev. C0

www.fairchildsemi.com

2

Package Marking and Ordering Information

Electrical Characteristics T

C = 25

oC unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Part Number

Top Mark

Package

Packing Method

Reel Size

Tape Width

Quantity

FCP20N60

FCP20N60

TO-220

Tube

N/A

N/A

50 units

FCPF20N60

FCPF20N60

TO-220F

Tube

N/A

N/A

50 units

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain to Source Breakdown Voltage

ID = 250 μA, VGS = 0 V, TJ = 25oC

600

-

-

V

ID = 250 μA, VGS = 0 V, TJ = 150oC-

650

-

V

ΔBVDSS

/

ΔTJ

Breakdown Voltage Temperature

Coefficient

ID = 250 μA, Referenced to 25oC-

0.6

-

V/oC

BVDS

Drain-Source Avalanche Breakdown

Voltage

VGS = 0 V, ID = 20 A

-

700

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = 600 V, VGS = 0 V

-

-

1

μA

VDS = 480 V, TC = 125oC-

-

10

IGSS

Gate to Body Leakage Current

VGS = ±30 V, VDS = 0 V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VGS = VDS, ID = 250 μA3.0

-

5.0

V

RDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 10 A

-

0.15

0.19

Ω

gFS

Forward Transconductance

VDS = 40 V, ID = 10 A

-

17

-

S

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1 MHz

-

2370

3080

pF

Coss

Output Capacitance

-

1280

1665

pF

Crss

Reverse Transfer Capacitance

-

95

-

pF

Coss

Output Capacitance

VDS = 480 V, VGS = 0 V, f = 1 MHz

-

65

85

pF

Coss(eff.)

Effective Output Capacitance

VDS = 0 V to 400 V, VGS = 0 V

-

165

-

pF

Qg

Total Gate Charge at 10V

VDS = 480 V, ID = 20 A,

VGS = 10 V

(Note 4)

-75

98

nC

Qgs

Gate to Source Gate Charge

-

13.5

18

nC

Qgd

Gate to Drain “Miller” Charge

-

36

-

nC

td(on)

Turn-On Delay Time

VDD = 300 V, ID = 20 A,

VGS = 10 V, RG = 25 Ω

(Note 4)

-

62

135

ns

tr

Turn-On Rise Time

-

140

290

ns

td(off)

Turn-Off Delay Time

-

230

470

ns

tf

Turn-Off Fall Time

-

65

140

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

20

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

60

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0 V, ISD = 20 A

-

-

1.4

V

trr

Reverse Recovery Time

VGS = 0 V, ISD = 20 A,

dIF/dt = 100 A/μs

-

530

-

ns

Qrr

Reverse Recovery Charge

-

10.5

-

μC

Notes:

1: Repetitive rating: pulse-width limited by maximum junction temperature.

2: IAS = 10 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.

3: ISD ≤ 20 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.

4: Essentially independent of operating temperature typical characteristics.