RZSLASHG2H datasheet(73/169 Pages) RENESAS

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RZ/G Series, 2nd Generation Datasheet

Section 3. Electrical Characteristics

R01DS0483EJ0101 Rev.1.01

Page 73 of 169

Jun 30, 2025

Table 3.4.22 DC Characteristics (1.1-V I/O [LPDDR4])

Item

Symbol

Min.

Typ.

Max.

Unit

Measurement

conditions

Remarks

Input high

voltage

(MDQ pin)

VIH

VREF + 0.09

—

VDDQVA_DDRn =

1.06 to 1.17 V

(n = 0 to 1)

VREF=

VDDQVA_DDRn*(1/6)

MDQ, and

MDQS pins

Input low

voltage

(MDQ pin)

VIL

—

VREF – 0.09

Input high

voltage

VIH

0.8 ×

VDDQVA_DDRn

(n = 0 to 1)

—

VDDQVA_DDRn =

1.06 to 1.17 V

(n = 0 to 1)

MBKUP pin

Input low

voltage

VIL

—

0.2 ×

VDDQVA_DDRn

(n = 0 to 1)

differential

input high

voltage

VIHD

0.09

—

MDQS = H,

VDDQVA_DDRn =

1.06 to 1.17 V

(n = 0 to 1)

MDQS pins

differential

input low

voltage

VILD

—

-0.09

MDQS = L,

VDDQVA_DDRn =

1.06 to 1.17 V

(n = 0 to 1)

Output high

voltage

VOH

0.99

—

VDDQVA_DDRn =

1.06 to 1.17 V

(n = 0 to 1)

MBKUP

pins

IOH = 0mA

Output low

voltage

VOL

—

0.16

VDDQVA_DDRn =

1.06 to 1.17 V

(n = 0 to 1)

MBKUP

pins

IOL = 0mA

High Hi-Z

leak current

IOZH

—

μA

VDDQVA_DDRn =

1.06 to 1.17 V

(n = 0 to 1)

Other than

MZQ

Low Hi-Z

leak current

IOZL

-10

—

μA

High Hi-Z

leak current

IOZH

—

μA

MZQ pin

Low Hi-Z

leak current

IOZL

-10

—

μA

capacitance

—

All pins*

Note:

Except power supply pins.

RZ/G2H

RZ/G2M V1.3

RZ/G2N

RZ/G2E

RZ/G2M V3.0

RZ/G2H Datasheet(PDF) 73 Page - Renesas Technology Corp

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