9

4964B–AUTO–07/07

ATA6842

1.23

Saturation voltage

low

I() = 1.6 mA, outputs low

C1O, C2O, VRE,

DO, RESAN,

RESN, UVW

Vs()lo

0.4

V

A

1.24

Saturation voltage

high

Vs() = V5 – V(),

I() = –0.1 mA, outputs high

C1O, C2O, DO,

RESN, UVW

Vs()hi

0.5

V

A

1.25

Saturation voltage

high

Vs() = V5A – V(),

I() = –0.1 mA, RESAN high

RESAN

Vs()hi

0.5

V

A

1.26

Saturation voltage

high

Vs() = V5 – V(),

I() = –1.6 mA, outputs high

C1O, C2O, DO,

RESN, UVW

Vs()hi

1

V

A

1.27

Saturation voltage

high

Vs() = V5A – V(),

I() = –1.6 mA, RESAN high

RESAN

Vs()hi

1

V

A

1.28 Rise time

V() from low = 10% ->

high = 90% V5

C1O, C2O, DO,

RESN, UVW

tr()

200

ns

B

1.29 Rise time

C

V() from low = 10% ->

high = 90% V5A

RESAN

tr()

200

ns

B

1.30 Fall time

C

V() from high = 90% ->

low = 10% V5

C1O, C2O, DO,

RESN, UVW

tf()

200

ns

B

1.31 Fall time

V() from high = 90% ->

low = 10% V5A

RESAN

tf()

200

ns

B

1.32 Leakage current

DO = off, V() = 0V to V5

DO

I()lk

–10

+10

µA

A

1.33

Short circuit current

low

V() = V5, pins = low

C1O, C2O, DO,

RESN, UVW

Isc()lo

8

40

mA

A

1.34

Short circuit current

low

V() = V5A, RESAN = low

RESAN

Isc()lo

8

40

mA

A

1.35

Short circuit current

high

V() = 0V, pins = high

C1O, C2O, VRE,

DO, RESAN,

RESN, UVW

Isc()hi

–30

–8

mA

A

1.36

Saturation voltage

high

Vs() = VI – V(),

I() = –0.1 mA, VRE high

VRE

Vs()hi

0.5

V

A

1.37

Saturation voltage

high

Vs() = VI – V(),

I() = –1.6 mA, VRE high

VRE

Vs()hi

1

V

A

1.38

Short circuit current

low

V() = VI, VRE = low

VRE

Isc()lo

8

40

mA

A

1.39 Rise time

V() from low = 10% ->

high = 90% VI

VRE

tr()

200

ns

B

1.40 Fall time

V() from high = 90% ->

low = 10% VI

VRE

tf()

200

ns

B

5.

Electrical Characteristics (Continued)

Operating conditions: V12 = 6.5V to 26V, V5 = 5V ±3%, RREF = 10 k

Ω ±2%, T

No. Parameters

Test Conditions

Pin

Symbol

Min.

Typ.

Max.

Unit

Type*

*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter

Note:

1. Reduced operation mode means either

- R

- Voltage at pin TCFET could be beyond specified limits