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STM32F101X4 Datasheet(PDF) 47 Page - STMicroelectronics |
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STM32F101X4 Datasheet(HTML) 47 Page - STMicroelectronics |
47 / 73 page STM32F101x4, STM32F101x6 Electrical characteristics Doc ID 15058 Rev 3 47/74 5.3.9 Memory characteristics Flash memory The characteristics are given at TA = –40 to 85 °C unless otherwise specified. Table 28. Flash memory endurance and data retention Table 27. Flash memory characteristics Symbol Parameter Conditions Min(1) 1. Guaranteed by design, not tested in production. Typ Max(1) Unit tprog 16-bit programming time TA–40 to +85 °C 40 52.5 70 µs tERASE Page (1 KB) erase time TA –40 to +85 °C 20 40 ms tME Mass erase time TA –40 to +85 °C 20 40 ms IDD Supply current Read mode fHCLK = 36 MHz with 1 wait state, VDD = 3.3 V 20 mA Write / Erase modes fHCLK = 36 MHz, VDD = 3.3 V 5mA Power-down mode / Halt, VDD = 3.0 to 3.6 V 50 µA Vprog Programming voltage 2 3.6 V Symbol Parameter Conditions Value Unit Min(1) 1. Based on characterization not tested in production. Typ Max NEND Endurance TA = –40 °C to 85 °C 10 kcycles tRET Data retention TA = 85 °C, 1 kcycle (2) 2. Cycling performed over the whole temperature range. 30 Years TA = 55 °C, 10 kcycle (2) 20 |
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