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STM32F101X4 Datasheet(PDF) 49 Page - STMicroelectronics

Part # STM32F101X4
Description  Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F101X4 Datasheet(HTML) 49 Page - STMicroelectronics

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STM32F101x4, STM32F101x6
Electrical characteristics
Doc ID 15058 Rev 3
49/74
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device is monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC61967-2 standard which specifies the test board and the pin loading.
5.3.11
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78 IC latch-up standard.
Table 30.
EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
Unit
8/36 MHz
SEMI
Peak level
VDD 3.3 V, TA 25 °C,
LQFP100 package
compliant with
IEC 61967-2
0.1 MHz to 30 MHz
7
dBµV
30 MHz to 130 MHz
8
130 MHz to 1GHz
13
SAE EMI Level
3.5
-
Table 31.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
1.
Based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA +25 °C
conforming to JESD22-A114
2
2000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device model)
TA +25 °C
conforming to JESD22-C101
II
500
Table 32.
Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA +85 °C conforming to JESD78A
II level A


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