CY8C52 datasheet(80/94 Pages) CYPRESS

80 / 94 page

PRELIMINARY

PSoC® 5: CY8C52 Family Datasheet

Document Number: 001-66236 Rev. **

Page 80 of 94

Figure 11-45. Clock to Output Performance

11.4 Memory

Specifications are valid for –40 °C

≤ TA ≤ 85 °C and TJ ≤ 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,

except where noted.

11.4.1 Flash

11.4.2 EEPROM

Table 11-43. Flash DC Specifications

Parameter

Description

Conditions

Min

Typ

Max

Units

Erase and program voltage

VDDD pin

1.71

–

5.5

Table 11-44. Flash AC Specifications

Parameter

Description

Conditions

Min

Typ

Max

Units

TWRITE

Row write time (erase + program)

–

TERASE

Row erase time

–

Row program time

–

TBULK

Bulk erase time (256 KB)

–

320

Sector erase time (16 KB)

–

Total device program time

(including JTAG or SWD and other

overhead)

–

Seconds

Flash data retention time, retention

period measured from last erase cycle

Average ambient temp.

TA ≤ 55 °C, 100 K erase/program

cycles

–

Years

–40 °C

≤ TA ≤ 85 °C, 10 K

erase/program cycles

–

Table 11-45. EEPROM DC Specifications

Parameter

Description

Conditions

Min

Typ

Max

Units

Erase and program voltage

1.71

–

5.5

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