S29AS016J datasheet(4/60 Pages) SPANSION

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S29AS016J

S29AS016J_00_11 February 1, 2012

Da ta

Sh e e t

General Description

The S29AS016J is a 16 Mbit, 1.8 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words

with a x8/x16 bus and either top or bottom boot sector architecture. The device is offered in 48-pin TSOP and

48-ball FBGA packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears

on DQ7–DQ0. This device is designed to be programmed and erased in-system with the standard system 1.8

volt VCC supply. A 12.0V VPP or 5.0 VCC are not required for program or erase operations. The device can

also be programmed in standard EPROM programmers.

The device offers access time of 70 ns allowing high speed microprocessors to operate without wait states. To

eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable

(OE#) controls.

The device requires only a single 1.8 volt power supply for both read and write functions. Internally

generated and regulated voltages are provided for the program and erase operations.

The S29AS016J is entirely command set compatible with the JEDEC single-power-supply Flash standard.

Commands are written to the command register using standard microprocessor write timings. Register

contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write

cycles also internally latch addresses and data needed for the programming and erase operations. Reading

data out of the device is similar to reading from other Flash or EPROM devices.

Device programming occurs by executing the program command sequence. This initiates the Embedded

Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies

proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write

cycles to program data instead of four.

Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase

algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed)

before executing the erase operation. During erase, the device automatically times the erase pulse widths

and verifies proper cell margin.

The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin,

or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been

completed, the device is ready to read array data or accept another command.

The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the

data contents of other sectors. The device is fully erased when shipped from the factory.

Hardware data protection measures include a low VCC detector that automatically inhibits write operations

during power transitions. The hardware sector group protection feature disables both program and erase

operations in any combination of the sectors of memory. This can be achieved in-system or via programming

equipment.

The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to

read data from, or program data to, any sector that is not selected for erasure. True background erase can

thus be achieved.

The hardware RESET# pin terminates any operation in progress and resets the internal state machine to

reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also

reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory.

The device offers two power-saving features. When addresses have been stable for a specified amount of

time, the device enters the automatic sleep mode. The system can also place the device into the standby

mode. Power consumption is greatly reduced in both these modes.

Spansion’s Flash technology combines years of Flash memory manufacturing experience to produce the

highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a

sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron

injection.

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