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JS28F640P33TF70 Datasheet(PDF) 63 Page - Numonyx B.V

Part # JS28F640P33TF70
Description  Numonyx짰 P33-65nm Flash Memory
PDF  88 Pages
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

JS28F640P33TF70 Datasheet(HTML) 63 Page - Numonyx B.V

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Datasheet
Jul 2011
63
Order Number:208034-04
P33-65nm SBC
Table 32: System Interface Information
Offset
Length
Description
Add
Hex
Code
Value
1Bh
1
VCC logic supply minimum program/erase voltage
bits 0-3 BCD 100 mV
bits 4-7 BCD volts
1B:
-23
2.3V
1Ch
1
VCC logic supply maximum program/erase voltage
bits 0-3 BCD 100 mV
bits 4-7 BCD volts
1C:
-36
3.6V
1Dh
1
VPP [programming] supply minimum program/erase voltage
bits 0-3 BCD 100 mV
bits 4-7 HEX volts
1D:
-85
8.5V
1Eh
1
VPP [programming] supply maximum program/erase voltage
bits 0-3 BCD 100 mV
bits 4-7 HEX volts
1E:
-95
9.5V
1Fh
1
“n” such that typical single word program time-out = 2n
µ-sec
1F:
-06
64
µs
20h
1
“n” such that typical full buffer write time-out = 2n
µ-sec
20:
-09
512
µs
21h
1
“n” such that typical block erase time-out = 2n m-sec
21:
-09
0.5s
22h
1
“n” such that typical full chip erase time-out = 2n m-sec
22:
-00
NA
23h
1
“n” such that maximum word program time-out = 2n times
typical
23:
-02
256
µs
24h
1
“n” such that maximum buffer write time-out = 2n times
typical
24:
-02
2048
µs
25h
1
“n” such that maximum block erase time-out = 2n times
typical
25:
-03
4s
26h
1
“n” such that maximum chip erase time-out = 2n times typical
26:
-00
NA



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