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JS28F640P33TF70 Datasheet(PDF) 67 Page - Numonyx B.V

Part # JS28F640P33TF70
Description  Numonyx짰 P33-65nm Flash Memory
PDF  88 Pages
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Manufacturer  NUMONYX [Numonyx B.V]
Direct Link  http://www.numonyx.com
Logo NUMONYX - Numonyx B.V

JS28F640P33TF70 Datasheet(HTML) 67 Page - Numonyx B.V

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Datasheet
Jul 2011
67
Order Number:208034-04
P33-65nm SBC
Table 37: Partition and Erase Block Region Information
Table 36: Burst Read Information
Offset
P=10Ah
Length
Description
(Optional flash features and commands)
Add.
Hex
Code
Value
(P+1D)h
1
Page Mode Read capability
bits 0-7 = “n” such that 2n HEX value represents the number
of read-page bytes. See offset 28h for device word width to
determine page-mode data output width. 00h indicates no
read page buffer.
127:
-04
16 Byte
(P+1E)h
1
Number of synchronous mode read configuration fields that
follow. 00h indicates no burst capability.
128:
-04
4
(P+1F)h
1
Synchronous mode read capability configuration 1
Bits 3-7 = Reserved
bits 0-2 “n” such that 2n+1 HEX value represents the
maximum number of continuous synchronous reads when
the device is configured for its maximum word width. A value
of 07h indicates that the device is capable of continuous
linear bursts that will output data until the internal burst
counter reaches the end of the device’s burstable address
space. This field’s 3-bit value can be written directly to the
Read Configuration Register bits 0-2 if the device is
configured for its maximum word width. See offset 28h for
word width to determine the burst data output width.
129:
-01
4
(P+20)h
1
Synchronous mode read capability configuration 2
12A:
-02
8
(P+21)h
1
Synchronous mode read capability configuration 3
12B:
-03
16
(P+22)h
1
Synchronous mode read capability configuration 4
12C:
-07
Cont
Offset(1)
See table below
P = 10Ah
Description
Address
Bottom
Top
(Optional flash features and commands)
Len
Bot
Top
(P+23)h (P+23)h
112D:
12D:
Number of device hardw are-partition regions w ithin the device.
x = 0: a single hardw are partition device (no fields follow ).
x specifies the number of device partition regions containing
one or more contiguous erase block regions.



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