AN2386 datasheet(20/30 Pages) STMICROELECTRONICS

Part #	AN2386

Description	How to achieve the threshold voltage thermal coefficient

PDF	30 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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20 / 30 page

Some considerations on VTH and TVTC equations and real examples

AN2386

20/30

When the gate concentration doping increases from 1e+20cm-3 to 1e+21cm-3 the threshold

voltage decreases its value, while, TVTC increases in absolute value and vice versa,

decreasing the gate concentration doping from 1e+20cm-3 to 1e+19cm-3. Now, the thermal

behavior increasing and decreasing the substrate doping concentration is simulated (see

Figure 13. and Figure 14.).

Figure 13.

DEVICE1 VTH simulated data - comparison between different Na

Figure 14.

DEVICE1 TVTC simulated data - comparison between different Na

When the substrate concentration doping increases from 2e+17cm-3 to 5e+17cm-3 the

threshold voltage increases its value and also TVTC increases in absolute value and vice

versa, decreasing the substrate concentration doping from 2e+17cm-3 to 5e+16cm-3. Now,

the case of different thickness oxide will be studied (see Figure 15. and Figure 16.).

Figure 15.

DEVICE1 VTH simulated data - comparison between different tox

AN2386 Datasheet(PDF) 20 Page - STMicroelectronics