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AN4599 Datasheet(PDF) 6 Page - STMicroelectronics

Part # AN4599
Description  This application note describes the features
PDF  26 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4599 Datasheet(HTML) 6 Page - STMicroelectronics

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Circuit description
AN4599
6/26
DocID026993 Rev 1
With reference to the schematic in Figure 13:
•
RFmin = R18 = 12 kΩ
•
RFmax = R19 = 3.3 kΩ
•
RSS = R15 = 5.6 kΩ
•
CF = C22 = 560 pF
•
CSS = C26 = 4.7 µF
2.3
Burst mode operation at no load or very light load
To reduce the average switching frequency, the L6699 can operate in burst mode with a
series of a few switching cycles in between relatively long idle periods with both MOSFETs
in the off state.
The resulting average value of the residual magnetizing current and corresponding loss is
reduced considerably, thus facilitating converter compliance with energy saving
specifications.
L6699 can be operated in burst mode via pin 5 (STBY): if the voltage applied to this pin falls
below 1.26 V, the IC enters the low-consumption idle state, where both gate drive outputs
are low and the oscillator is stopped; the IC resumes normal operation when the voltage on
pin exceeds 1.26 V + 30 mV.
To implement burst mode operation, the voltage applied to the STBY pin needs to be
associated with the feedback loop.
The resonant converter switching frequency and hence burst mode activation strongly
depends on the variation of the input voltage.
Use the circuit in Figure 3 when the input voltage range is quite large.
Due to the high non-linear relationship between the switching frequency and input voltage, it
is more practical to empirically determine the correct magnitude for RA/(RA+RB) correction
and RFmax to obtain an almost constant burst mode threshold in all input voltage ranges.
In this application, we obtained a good compromise with RA = 56 kΩ, RB = 150 kΩ and
RFmax = 3.3 kΩ.
Figure 3. Wide input voltage range schematic



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