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AN4599 Datasheet(PDF) 6 Page - STMicroelectronics |
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AN4599 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 26 page ![]() Circuit description AN4599 6/26 DocID026993 Rev 1 With reference to the schematic in Figure 13: • RFmin = R18 = 12 kΩ • RFmax = R19 = 3.3 kΩ • RSS = R15 = 5.6 kΩ • CF = C22 = 560 pF • CSS = C26 = 4.7 µF 2.3 Burst mode operation at no load or very light load To reduce the average switching frequency, the L6699 can operate in burst mode with a series of a few switching cycles in between relatively long idle periods with both MOSFETs in the off state. The resulting average value of the residual magnetizing current and corresponding loss is reduced considerably, thus facilitating converter compliance with energy saving specifications. L6699 can be operated in burst mode via pin 5 (STBY): if the voltage applied to this pin falls below 1.26 V, the IC enters the low-consumption idle state, where both gate drive outputs are low and the oscillator is stopped; the IC resumes normal operation when the voltage on pin exceeds 1.26 V + 30 mV. To implement burst mode operation, the voltage applied to the STBY pin needs to be associated with the feedback loop. The resonant converter switching frequency and hence burst mode activation strongly depends on the variation of the input voltage. Use the circuit in Figure 3 when the input voltage range is quite large. Due to the high non-linear relationship between the switching frequency and input voltage, it is more practical to empirically determine the correct magnitude for RA/(RA+RB) correction and RFmax to obtain an almost constant burst mode threshold in all input voltage ranges. In this application, we obtained a good compromise with RA = 56 kΩ, RB = 150 kΩ and RFmax = 3.3 kΩ. Figure 3. Wide input voltage range schematic |
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