PIC16CE623-04SLASHSS datasheet(81/108 Pages) MICROCHIP

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Preliminary

DS40182A-page 81

PIC16CE62X

13.0

ELECTRICAL SPECIFICATIONS

Absolute Maximum Ratings †

Ambient Temperature under bias .............................................................................................................. -40

° to +125°C

Storage Temperature................................................................................................................................. -65

° to +150°C

Voltage on any pin with respect to VSS (except VDD and MCLR)....................................................... -0.6V to VDD +0.6V

Voltage on VDD with respect to VSS ................................................................................................................ 0 to +7.5V

Voltage on MCLR with respect to VSS (Note 2)..................................................................................................0 to +14V

Total power Dissipation (Note 1) ...............................................................................................................................1.0W

Maximum Current out of VSS pin...........................................................................................................................300 mA

Maximum Current into VDD pin .............................................................................................................................250 mA

Input Clamp Current, IIK (VI <0 or VI> VDD)

......................................................................................................................±20 mA

Output Clamp Current, IOK (VO <0 or VO>VDD)

...............................................................................................................±20 mA

Maximum Output Current sunk by any I/O pin ........................................................................................................25 mA

Maximum Output Current sourced by any I/O pin ...................................................................................................25 mA

Maximum Current sunk by PORTA and PORTB ...................................................................................................200 mA

Maximum Current sourced by PORTA and PORTB ..............................................................................................200 mA

Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD -

∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL)

† NOTICE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above

those indicated in the operation listings of this speciﬁcation is not implied. Exposure to maximum rating conditions

for extended periods may affect device reliability.

62X.bk Page 81 Tuesday, March 10, 1998 3:40 PM

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