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PIC16C641-04/SP Datasheet(PDF) 93 Page - Microchip Technology |
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PIC16C641-04/SP Datasheet(HTML) 93 Page - Microchip Technology |
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93 / 136 page ![]() © 1996 Microchip Technology Inc. Preliminary DS30559A-page 93 PIC16C64X & PIC16C66X 12.2 DC Characteristics: PIC16LC641/642/661/662-04 (Commercial, Industrial) Standard Operating Conditions (unless otherwise stated) Operating temperature –40 °C ≤ TA ≤ +85°C for industrial and 0 °C ≤ TA ≤ +70°C commercial Param No. Sym Characteristic Min Typ† Max Units Conditions D001 VDD Supply Voltage 3.0 – 6.0 V XT, RC, and LP osc configuration D002* VDR RAM Data Retention Voltage (1) 1.5 – – V Device in SLEEP mode D003 VPOR VDD start voltage to ensure internal Power-on Reset signal –VSS – V See section on Power-on Reset for details D004* SVDD VDD rise rate to ensure internal Power-on Reset signal 0.05 – – V/ms See section on Power-on Reset for details D005 VBOR Brown-out Reset Voltage 3.7 4.0 4.3 V BODEN configuration bit is clear D010 D010A IDD Supply Current (2) – – 2.0 22.5 3.8 48 mA µA XT and RC osc configuration FOSC = 4.0 MHz, VDD = 3.0V, WDT disabled (4) LP osc configuration FOSC = 32 kHz, VDD = 3.0V, WDT disabled Module Differential Current (5) D015 ∆IBOR Brown-out Reset Current – 350 425 µA BODEN bit is clear, VDD = 5.0V D016 ∆ICOMP Comparator Current for each Comparator – – 100 µAVDD = 3.0V D017 ∆IVREF VREF Current – – 300 µAVDD = 3.0V D021 ∆IWDT WDT Current – 6.0 20 µAVDD = 3.0V D021 IPD Power-down Current (3) – 0.9 5 µAVDD = 3.0V, WDT disabled * These parameters are characterized but not tested. † Data in “Typ” column is at 5.0V, 25 °C, unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: This is the limit to which VDD can be lowered in SLEEP mode without losing RAM data. 2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current consumption. The test conditions for all IDD measurements in active operation mode are: OSC1=external square wave, from rail to rail; all I/O pins tristated, pulled to VDD, MCLR = VDD; WDT enabled/disabled as specified. 3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to VDD or VSS. 4: For RC osc configuration, current through Rext is not included. The current through the resistor can be estimated by the formula Ir = VDD/2Rext (mA) with Rext in k Ω. 5: The ∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the base IDD or IPD measurement. |
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