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KAI-2001 Datasheet(PDF) 10 Page - ON Semiconductor

Part # KAI-2001
Description  Interline CCD Image Sensor
PDF  36 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

KAI-2001 Datasheet(HTML) 10 Page - ON Semiconductor

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KAI−2001
www.onsemi.com
10
IMAGING PERFORMANCE
Table 5. TYPICAL OPERATIONAL CONDITIONS
(Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions.)
Description
Condition
Notes
Frame Time
237 ms
1
Horizontal Clock Frequency
10 MHz
Light Source
Continuous Red, Green and Blue LED Illumination Centered at 450, 530 and 650 nm
2, 3
Operation
Nominal Operating Voltages and Timing
1. Electronic shutter is not used. Integration time equals frame time.
2. LEDs used: Blue: Nichia NLPB500, Green: Nichia NSPG500S and Red: HP HLMP−8115.
3. For monochrome sensor, only green LED used.
Specifications
Table 6. PERFORMANCE SPECIFICATIONS
Description
Symbol
Min.
Nom.
Max.
Unit
Sampling
Plan
Temperature
Tested at
(
5C)
ALL CONFIGURATIONS
Dark Center Uniformity
N/A
N/A
20
e− rms
Die
27, 40
Dark Global Uniformity
N/A
N/A
5.0
mVpp
Die
27, 40
Global Uniformity (Note 1)
N/A
2.5
5.0
% rms
Die
27, 40
Global Peak to Peak Uniformity
(Note 1)
PRNU
N/A
10
20
% pp
Die
27, 40
Center Uniformity (Note 1)
N/A
1.0
2.0
% rms
Die
27, 40
Maximum Photoresponse
Non-Linearity (Notes 2, 3)
NL
N/A
2
−
%
Design
Maximum Gain Difference between
Outputs (Notes 2, 3)
DG
N/A
10
−
%
Design
Max. Signal Error due to Non-Linearity
Dif. (Notes 2, 3)
DNL
N/A
1
−
%
Design
Horizontal CCD Charge Capacity
HNe
N/A
100
N/A
ke−
Design
Vertical CCD Charge Capacity
VNe
N/A
50
N/A
ke−
Die
Photodiode Charge Capacity
PNe
38
40
N/A
ke−
Die
Horizontal CCD Charge Transfer
Efficiency
HCTE
0.99999
N/A
N/A
Design
Vertical CCD Charge Transfer
Efficiency
VCTE
0.99999
N/A
N/A
Design
Photodiode Dark Current
IPD
N/A
N/A
40
0.01
350
0.1
e/p/s
nA/cm2
Die
27, 40
Vertical CCD Dark Current
IVD
N/A
N/A
400
0.12
1,711
0.5
e/p/s
nA/cm2
Die
27, 40
Image Lag
Lag
N/A
< 10
50
e−
Design
Anti-Blooming Factor
XAB
100
300
N/A
Design
Vertical Smear
Smr
N/A
80
75
dB
Design
Total Noise (Note 4)
ne−T
−
23
−
e− rms
Design
Total Noise (Note 5)
ne−T
−
40
−
e− rms
Design
Dynamic Range (Notes 5, 6)
DR
−
60
−
dB
Design
Output Amplifier DC Offset
VODC
4
8.5
14
V
Die



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