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KAI-2001 Datasheet(PDF) 17 Page - ON Semiconductor

Part # KAI-2001
Description  Interline CCD Image Sensor
PDF  36 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

KAI-2001 Datasheet(HTML) 17 Page - ON Semiconductor

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KAI−2001
www.onsemi.com
17
TEST DEFINITIONS
Test Regions of Interest
Active Area ROI:
Pixel (1, 1) to Pixel (1600, 1200)
Center 100 by 100 ROI:
Pixel (750, 550) to
Pixel (849, 649)
Only the active pixels are used for performance and defect
tests.
Overclocking
The test system timing is configured such that the sensor
is overclocked in both the vertical and horizontal directions.
See Figure 16 for a pictorial representation of the regions.
Figure 16. Overclock Regions of Interest
Pixel 1,1
Vertical Overclock
Tests
Dark Field Center Non-Uniformity
This test is performed under dark field conditions. Only
the center 100 by 100 pixels of the sensor are used for this
test − pixel (750, 550) to pixel (849, 649).
Dark Field Center Uniformity
+ Standard Deviation of Center 100 by 100 Pixels in Electrons @
DPS Integration Time
Actual Integration Time Used
Units: mV rms. DPS Integration Time: Device Performance Specification Integration Time = 33 ms.
Dark Field Global Non-Uniformity
This test is performed under dark field conditions.
The sensor is partitioned into 192 sub regions of interest,
each of which is 100 by 100 pixels in size. See Figure 17.
The average signal level of each of the 192 sub regions of
interest is calculated. The signal level of each of the sub
regions of interest is calculated using the following formula:
Signal of ROI[i]
+ (ROI Average in ADU *
Units : mVpp (millivolts Peak to Peak)
* Horizontal Overclock Average in ADU) @
@ mV per Count
Where i = 1 to 192. During this calculation on the 192 sub
regions of interest, the maximum and minimum signal levels
are found. The dark field global uniformity is then calculated
as the maximum signal found minus the minimum signal
level found.
Global Non-Uniformity
This test is performed with the imager illuminated to
a level such that the output is at 80% of saturation
(approximately 32,000 electrons). Prior to this test being
performed the substrate voltage has been set such that the
charge capacity of the sensor is 40,000 electrons. Global
uniformity is defined as:
Global Uniformity
+ 100 @
Active Area Standard Deviation
Active Area Signal
Active Area Signal = Active Area Average − H. Overclock Average
Units : % rms



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