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KAI-2001 Datasheet(PDF) 17 Page - ON Semiconductor |
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KAI-2001 Datasheet(HTML) 17 Page - ON Semiconductor |
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17 / 36 page ![]() KAI−2001 www.onsemi.com 17 TEST DEFINITIONS Test Regions of Interest Active Area ROI: Pixel (1, 1) to Pixel (1600, 1200) Center 100 by 100 ROI: Pixel (750, 550) to Pixel (849, 649) Only the active pixels are used for performance and defect tests. Overclocking The test system timing is configured such that the sensor is overclocked in both the vertical and horizontal directions. See Figure 16 for a pictorial representation of the regions. Figure 16. Overclock Regions of Interest Pixel 1,1 Vertical Overclock Tests Dark Field Center Non-Uniformity This test is performed under dark field conditions. Only the center 100 by 100 pixels of the sensor are used for this test − pixel (750, 550) to pixel (849, 649). Dark Field Center Uniformity + Standard Deviation of Center 100 by 100 Pixels in Electrons @ DPS Integration Time Actual Integration Time Used Units: mV rms. DPS Integration Time: Device Performance Specification Integration Time = 33 ms. Dark Field Global Non-Uniformity This test is performed under dark field conditions. The sensor is partitioned into 192 sub regions of interest, each of which is 100 by 100 pixels in size. See Figure 17. The average signal level of each of the 192 sub regions of interest is calculated. The signal level of each of the sub regions of interest is calculated using the following formula: Signal of ROI[i] + (ROI Average in ADU * Units : mVpp (millivolts Peak to Peak) * Horizontal Overclock Average in ADU) @ @ mV per Count Where i = 1 to 192. During this calculation on the 192 sub regions of interest, the maximum and minimum signal levels are found. The dark field global uniformity is then calculated as the maximum signal found minus the minimum signal level found. Global Non-Uniformity This test is performed with the imager illuminated to a level such that the output is at 80% of saturation (approximately 32,000 electrons). Prior to this test being performed the substrate voltage has been set such that the charge capacity of the sensor is 40,000 electrons. Global uniformity is defined as: Global Uniformity + 100 @ Active Area Standard Deviation Active Area Signal Active Area Signal = Active Area Average − H. Overclock Average Units : % rms |
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