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DP8420V Datasheet(PDF) 16 Page - National Semiconductor (TI) |
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DP8420V Datasheet(HTML) 16 Page - National Semiconductor (TI) |
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16 / 60 page ![]() 40 Port A Access Modes (Continued) 44 READ-MODIFY-WRITE CYCLES WITH EITHER ACCESS MODE There are 2 methods by which this chip can be used to do read-modify-write access cycles The first method involves doing a late write access where the WIN input is asserted some delay after CAS is asserted The second method in- volves doing a page mode read access followed by a page mode write access with RAS held low (see Figure 9c ) CASn must be toggled using the ECASn inputs and WIN has to be changed from negated to asserted (read to write) while CAS is negated This method is better than changing WIN from negated to asserted in a late write access be- cause here a problem may arise with DATA IN and DATA OUT being valid at the same time This may result in a data line trying to drive two different levels simultaneously The page mode method of a read-modify-write access allows the user to have transceivers in the system because the data in (read data) is guaranteed to be high impedance dur- ing the time the data out (write data) is valid TLF11109 – 13 There may be idle states inserted here by the CPU FIGURE 9c Read-Modify-Write Access Cycle 16 |
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