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MYX29GL01GS11DPIV2 Datasheet(PDF) 4 Page - Micross Components

Part # MYX29GL01GS11DPIV2
Description  Tin-lead ball metallurgy
PDF  68 Pages
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Manufacturer  MICROSS [Micross Components]
Direct Link  http://www.micross.com
Logo MICROSS - Micross Components

MYX29GL01GS11DPIV2 Datasheet(HTML) 4 Page - Micross Components

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MYX29GL01GS11DPIV2
Revision 1.0 - 01/26/2015
*Advanced information. Subject to change without notice.
4
1Gb GL-S MirrorBit® Eclipse™
Flash Memory
MYX29GL01GS11DPIV2*
Form #: CSI-D-685 Document 001
Table 2: Address Map
Type
Count
Addresses
Address within Page
16
A3 - A0
Address within Write Buffer
256
A7 - A0
Page
4096
A15 - A4
Write-Buffer-Line
256
A15 A8
Sector
1024 (1 Gb)
512 (512 Mb)
256 (256 Mb)
128 (128 Mb)
AMAX - A16
Thedevicecontrollogicissubdividedintotwoparalleloperatingsections,theHostInterfaceController(HIC)
and the Embedded Algorithm Controller (EAC). HIC monitors signal levels on the device inputs and drives
outputsasneededtocompletereadandwritedatatransferswiththehostsystem.HICdeliversdatafromthe
currentlyenteredaddressmaponreadtransfers;placeswritetransferaddressanddatainformationintothe
EACcommandmemory;notifiestheEACofpowertransition,hardwarereset,andwritetransfers.TheEAC
looksinthecommandmemory,afterawritetransfer,forlegalcommandsequencesandperformstherelated
EmbeddedAlgorithms.
Changing the non-volatile data in the memory array requires a complex sequence of operations that are
calledEmbeddedAlgorithms(EA).ThealgorithmsaremanagedentirelybythedeviceinternalEAC.Themain
algorithmsperformprogramminganderaseofthemainarraydata.Thehostsystemwritescommandcodes
to the flash device address space. The EAC receives the commands, performs all the necessary steps to
completethecommand,andprovidesstatusinformationduringtheprogressofanEA.
Theerasedstateofeachmemorybitisalogic1.Programmingchangesalogic1(High)toalogic0(Low).Only
anEraseoperationisabletochangea0toa1.Aneraseoperationmustbeperformedonanentire128-kbyte
alignedandlengthgroupofdatacallaSector.
Programmingisdoneviaa512-byteWriteBuffer.Itispossibletowritefrom1to256words,anywherewithin
theWriteBufferbeforestartingaprogrammingoperation.Withintheflashmemoryarray,each512-bytealigned
groupof512bytesiscalledaLine.AprogrammingoperationtransfersvolatiledatafromtheWriteBuffertoa
non-volatilememoryarrayLine.TheoperationiscalledWriteBufferProgramming.
TheWriteBufferisfilledwith1’safterresetorthecompletionofanyoperationusingtheWriteBuffer.Any
locationsnotwrittentoa0byaWritetoBuffercommandarebydefaultstillfilledwith1’s.Any1’sintheWrite
Bufferdonotaffectdatainthememoryarrayduringaprogrammingoperation.
AseachPageofdatathatwasloadedintotheWriteBufferistransferredtoamemoryarrayLine.
SectorsmaybeindividuallyprotectedfromprogramanderaseoperationsbytheAdvancedSectorProtection
(ASP)featureset.ASPprovidesseveral,hardwareandsoftwarecontrolled,volatileandnon-volatile,methods
toselectwhichsectorsareprotectedfromprogramanderaseoperations.



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