MYX29GL01GS11DPIV2 datasheet(3/68 Pages) MICROSS

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MYX29GL01GS11DPIV2

Revision 1.0 - 01/26/2015

*Advanced information. Subject to change without notice.

1Gb GL-S MirrorBit® Eclipse™

Flash Memory

MYX29GL01GS11DPIV2*

Form #: CSI-D-685 Document 001

Product Overview

TheMYX29GL01GS11DPIV2hasa16-bit(word)widedatabusandusesonlywordboundaryaddresses.All

readaccessesprovide16bitsofdataoneachbustransfercycle.Allwritestake16bitsofdatafromeachbus

transfercycle.

Figure 1: Block Diagram

GL-S MirrorBit® Family

S29GL_128S_01GS_00_08 October 9, 2013

D a t a S h e e t

1. Product Overview

The GL-S family consists of 128-Mbit to 1Gbit, 3.0V core, Versatile I/O, non-volatile, flash memory devices.

These devices have a 16-bit (word) wide data bus and use only word boundary addresses. All read accesses

provide 16 bits of data on each bus transfer cycle. All writes take 16 bits of data from each bus transfer cycle.

Figure 1.1 Block Diagram

:Note:

** AMAX GL01GS = A25, AMAX GL512S = A24, AMAX GL256S = A23, AMAX GL128S = A22

The GL-S family combines the best features of eXecute In Place (XIP) and Data Storage flash memories.

This MYX29GL01GS11DPIV2 has the fast random access of XIP flash along with the high density and

fast program speed of Data Storage flash.

Read access to any random location takes 90 ns to 120 ns depending on device density and I/O power

supply voltage. Each random (initial) access reads an entire 32-byte aligned group of data called a Page.

Other words within the same Page may be read by changing only the low order 4 bits of word address. Each

access within the same Page takes 15 ns to 30 ns. This is called Page Mode read. Changing any of the

higher word address bits will select a different Page and begin a new initial access. All read accesses are

asynchronous.

Input/Output

Buffers

X-Decoder

Y-Decoder

Chip Enable

Output Enable

Logic

Erase Voltage

Generator

PGM Voltage

Generator

Timer

VCC Detector

State

Control

Command

VCC

VSS

WE#

WP#

CE#

OE#

STB

DQ15–DQ0

Sector Switches

RY/BY#

RESET#

Data

Latch

Y-Gating

Cell Matrix

AMax**–A0

TheMYX29GL01GS11DPIV2combinesthebestfeaturesofeXecuteInPlace(XIP)andDataStorageflash

memories.ThisMYX29GL01GS11DPIV2hasthefastrandomaccessofXIPflashalongwiththehighdensity

andfastprogramspeedofDataStorageflash.

Readaccesstoanyrandomlocationtakes90nsto120nsdependingondevicedensityandI/Opowersupply

voltage.Eachrandom(initial)accessreadsanentire32-bytealignedgroupofdatacalledaPage.Otherwords

withinthesamePagemaybereadbychangingonlytheloworder4bitsofwordaddress.Eachaccesswithin

thesamePagetakes15nsto30ns.ThisiscalledPageModeread.Changinganyofthehigherwordaddress

bitswillselectadifferentPageandbeginanewinitialaccess.Allreadaccessesareasynchronous.

Note:AMAXGL01GS=A25

MYX29GL01GS11DPIV2 Datasheet(PDF) 3 Page - Micross Components

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