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MYX29GL01GS11DPIV2 Datasheet(PDF) 1 Page - Micross Components |
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MYX29GL01GS11DPIV2 Datasheet(HTML) 1 Page - Micross Components |
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1 / 68 page  MYX29GL01GS11DPIV2 Revision 1.0 - 01/26/2015 *Advanced information. Subject to change without notice. 1 1Gb GL-S MirrorBit® Eclipse™ Flash Memory MYX29GL01GS11DPIV2* Form #: CSI-D-685 Document 001 1Gbit - 64M x 16 GL-S MirrorBit© Eclipse™ Flash Memory Features • Tin-leadballmetallurgy • 65nmMirrorBitEclipsetechnology • Singlesupply(VCC)forread/program/erase (2.7Vto3.6V) • VersatileI/OFeature WideI/Ovoltagerange(VIO):1.65VtoVCC • Asynchronous32-bytepageread • 512-byteprogrammingbuffer Programminginpagemultiples,uptoamaximumof 512bytes • Singlewordandmultipleprogramonsame • wordoptions • SectorErase Uniform128-kbytesectors • Suspendandresumecommandsforprogramanderase operations • Statusregister,datapolling,andready/busypinmethods todeterminedevicestatus Options Marking • Configuration 64Mx16 • FBGApackage(Sn63Pb37solder) BG 64-ballFBGA(9mmx9mm) D • Operatingtemperature Industrial(-40°C ≤TC≤+85°C) IT Density Voltage Range Random Access Time (tACC) Page Access Time (tPACC) CE# Access Time (tCE) OE# Access Time (tOE) 1 Gb Full VCC = VI0 100 15 100 25 VersatileIO VIO 110 25 110 35 Typical Program and Erase Rates Buffer Programming (512 bytes) 1.5 MB/s Sector Erase (128 kbytes) 477 kB/s Maximum Current Consumption Active Read at 5 MHz, 30 pF 60 mA Program 100 mA Erase 100 mA Standby 100 μA • AdvancedSectorProtection(ASP) Volatileandnon-volatileprotectionmethodsforeach sector • Separate1024-byteOneTimeProgram(OTP)arraywith twolockableregions • CommonFlashInterface(CFI)parametertable • 100,000erasecyclesforanysectortypical • 20-yeardataretentiontypical Table 1: Performance Summary |
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