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MYX29GL01GS11DPIV2 Datasheet(PDF) 63 Page - Micross Components

Part # MYX29GL01GS11DPIV2
Description  Tin-lead ball metallurgy
PDF  68 Pages
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Manufacturer  MICROSS [Micross Components]
Direct Link  http://www.micross.com
Logo MICROSS - Micross Components

MYX29GL01GS11DPIV2 Datasheet(HTML) 63 Page - Micross Components

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MYX29GL01GS11DPIV2
Revision 1.0 - 01/26/2015
*Advanced information. Subject to change without notice.
63
1Gb GL-S MirrorBit® Eclipse™
Flash Memory
MYX29GL01GS11DPIV2*
Form #: CSI-D-685 Document 001
10.3.3
Alternate CE# Controlled Write Operations
Table 26: Alternate CE# Controlled Write Operations
Parameter
Description
VIO = 2.7V
to VCC
VIO = 1.65V
to VCC
Unit
JEDEC
Std
tAVAV
tWC
Write Cycle Time1
Min
60
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# Low during toggle bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# High during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
30
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
t0EPH
OE# High during toggle bit polling
Min
20
ns
tGHEK
tGHEL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tELWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
25
ns
tEHEL
tCPH
CE# Pulse Width High
Min
20
ns
Note:1.Not100%tested.



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