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R5F564MFDDFB Datasheet(PDF) 213 Page - Renesas Technology Corp |
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R5F564MFDDFB Datasheet(HTML) 213 Page - Renesas Technology Corp |
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213 / 228 page  R01DS0173EJ0110 Rev.1.10 Page 213 of 228 Oct 24, 2016 RX64M Group 5. Electrical Characteristics 5.11 Flash Memory Characteristics Note 1. Definition of reprogram/erase cycle: The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 1000), erasing can be performed n times for each block. For instance, when 256-byte programming is performed 32 times for different addresses in 8-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming the same address for several times as one erasing is not enabled (overwriting is prohibited). Note 2. This is the minimum number of times to guarantee all the characteristics after reprogramming (guaranteed range is from 1 to the value of the minimum value). Note 3. This shows the characteristics when reprogramming is performed within the specified range, including the minimum value. Table 5.53 Code Flash Memory Characteristics Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 2.7 to 3.6 V, 2.7 ≤ VREFH0 ≤ AVCC0, VCC_USBA = AVCC_USBA = 3.0 to 3.6 V, VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = VSS1_USBA = VSS2_USBA = PVSS_USBA = AVSS_USBA = 0 V Temperature range for programming/erasure: Ta = Topr Item Symbol FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 60 MHz Unit Min. Typ. Max. Min. Typ. Max. Programming time NPEC 100 times 256 bytes tP256 —0.9 13.2 —0.4 6 ms 8 Kbytes tP8K — 29 176 — 13 80 ms 32 Kbytes tP32K — 116 704 — 52 320 ms Programming time NPEC > 100 times 256 bytes tP256 —1.1 15.8 —0.5 7.2 ms 8 Kbytes tP8K — 35 212 — 16 96 ms 32 Kbytes tP32K — 140 848 — 64 384 ms Erasure time NPEC 100 times 8 Kbytes tE8K — 71 216 — 39 120 ms 32 Kbytes tE32K — 254 864 — 141 480 ms Erasure time NPEC > 100 times 8 Kbytes tE8K — 85 260 — 47 144 ms 32 Kbytes tE32K — 304 1040 — 169 576 ms Reprogramming/erasure cycle*1 NPEC 1000*2 — — 1000*2 —— Times Suspend delay time during programming tSPD — — 264 — — 120 μs First suspend delay time during erasing (in suspend priority mode) tSESD1 — — 216 — — 120 μs Second suspend delay time during erasure (in suspend priority mode) tSESD2 —— 1.7 —— 1.7 ms Suspend delay time during erasure (in erasure priority mode) tSEED —— 1.7 —— 1.7 ms Forced stop command tFD —— 32 —— 20 μs Data hold time*3 tDRP 10 — — 10 — — Year FCU reset time tFCUR 35 — — 35 — — μs |
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